2SC523 Todos los transistores

 0.1. Size:270K  toshiba
 2sc5232.pdf

2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current I = 500 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Colle

 0.2. Size:280K  toshiba
 2sc5233.pdf

2SC5233 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current I = 500 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Colle

 0.3. Size:279K  sanyo
 2sc5231a.pdf

Ordering number ENA1077 2SC5231A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5231A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim.

 0.4. Size:128K  sanyo
 2sc5230.pdf

Ordering number EN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =10.5dB typ (f=1GHz). 2004B High cutoff frequency fT=6.5GHz typ. [2SC5230] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Base 2 Emitter 3 Collecto

 0.5. Size:132K  sanyo
 2sc5231.pdf

Ordering number EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2106A High cutoff frequency fT=7GHz typ. [2SC5231] Very small-sized package permiting 2SC5231- 0.75 0.3 0.6 applied set

 0.6. Size:104K  sanyo
 2sc5238.pdf

Ordering number EN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5238] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.

 0.7. Size:407K  onsemi
 2sc5231a-8.pdf

Ordering number ENA1077A 2SC5231A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single SMCP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Ultrasmall-sized package permitting applied sets to be made small and slim Specifications Absolute Maximum Ratings at Ta=25 C Paramete

 0.8. Size:36K  hitachi
 2sc5237.pdf

2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features Excellent high frequency characteristics fT = 400 MHz typ High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ Suitable for wide band video amplifier Outline TO-126FM 1. Emitter 2. Collector 3. Base 1 2 3 2SC5237 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratin

 0.9. Size:23K  sanken-ele
 2sc5239.pdf

2SC5239 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol 2SC5239 Symbol Conditions 2SC5239 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 550 IEB

 0.10. Size:677K  kexin
 2sc5232.pdf

SMD Type Transistors NPN Transistors 2SC5232 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=12V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec

 0.11. Size:175K  inchange semiconductor
 2sc5239.pdf