2SC523 - описание и поиск аналогов

2SC5232 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5232 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current I = 500 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Colle

2SC5233 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5233 General Purpose Amplifier Applications Unit mm Switching and Muting Switch Application Low saturation voltage VCE (sat) (1) = 15 mV (typ.) @I = 10 mA/I = 0.5 mA C B Large collector current I = 500 mA (max) C Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Colle

Ordering number ENA1077 2SC5231A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5231A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Ultrasmall-sized package permitting applied sets to be made small and slim.

Ordering number EN5046 NPN Epitaxial Planar Silicon Transistor 2SC5230 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =10.5dB typ (f=1GHz). 2004B High cutoff frequency fT=6.5GHz typ. [2SC5230] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Base 2 Emitter 3 Collecto

Ordering number EN5036B NPN Epitaxial Planar Silicon Transistor 2SC5231 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2106A High cutoff frequency fT=7GHz typ. [2SC5231] Very small-sized package permiting 2SC5231- 0.75 0.3 0.6 applied set

Ordering number EN5126 NPN Triple Diffused Planar Silicon Transistor 2SC5238 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2111A High reliability (Adoption of HVP process). [2SC5238] Adoption of MBIT process. 20.0 5.0 1.75 1.0 2.9 1.

Ordering number ENA1077A 2SC5231A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single SMCP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Ultrasmall-sized package permitting applied sets to be made small and slim Specifications Absolute Maximum Ratings at Ta=25 C Paramete

2SC5237 Silicon NPN Epitaxial Application High frequency amplifier Features Excellent high frequency characteristics fT = 400 MHz typ High voltage and low output capacitance VCEO = 250 V, Cob = 3.5 pF typ Suitable for wide band video amplifier Outline TO-126FM 1. Emitter 2. Collector 3. Base 1 2 3 2SC5237 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratin

2SC5239 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) Application Switching Regulator and General Purpose Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) External Dimensions MT-25(TO220) Symbol 2SC5239 Symbol Conditions 2SC5239 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 900 ICBO VCB=800V 100max A V VCEO 550 IEB

SMD Type Transistors NPN Transistors 2SC5232 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=500mA 1 2 Collector Emitter Voltage VCEO=12V +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collec