2SC526 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC526
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.75 W
Tensión colector-base (Vcb): 165 V
Tensión colector-emisor (Vce): 150 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.055 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 125 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO5
Búsqueda de reemplazo de 2SC526
- Selecciónⓘ de transistores por parámetros
2SC526 datasheet
0.8. Size:463K sanyo
2sc5264.pdf 
Ordering number ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079C Adoption of MBIT process. [2SC5264] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 SANYO
0.9. Size:42K sanyo
2sc5264ls.pdf
Ordering number ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5264] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55 Spe
0.10. Size:112K sanyo
2sc5265.pdf
Ordering number EN5321 NPN Triple Diffused Planar Silicon Transistor 2SC5265 Inverter-controlled Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1200V). unit mm High reliability (Adoption of HVP process). 2079B Adoption of MBIT process. [2SC5265] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter 2.55 2.55
0.11. Size:31K sanyo
2sc5265ls.pdf
Ordering number ENN5321A 2SC5265LS NPN Triple Diffused Planar Silicon Transistor 2SC5265LS Inverter-Controlled Lighting Applications Features Package Dimensions High breakdown voltage(VCBO=1200V). unit mm High reliability(Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5265LS] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Base 2 Collector
0.12. Size:209K inchange semiconductor
2sc5265.pdf
isc Silicon NPN Power Transistor 2SC5265 DESCRIPTION High Breakdown Voltage-(Vcb=1200V) High Reliability Adoption of MBIT process Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverter-controlled Lighting ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1200 V CBO V Collector-E
Otros transistores... 2SC524M, 2SC524O, 2SC524R, 2SC525, 2SC5250, 2SC5251, 2SC525O, 2SC525R, MJE350, 2SC526M, 2SC527, 2SC5271, 2SC5273, 2SC528, 2SC5287, 2SC529, 2SC529A
