2SC526 Datasheet and Replacement
Type Designator: 2SC526
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75
W
Maximum Collector-Base Voltage |Vcb|: 165
V
Maximum Collector-Emitter Voltage |Vce|: 150
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.055
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 125
MHz
Collector Capacitance (Cc): 6
pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO5
-
BJT ⓘ Cross-Reference Search
2SC526 Datasheet (PDF)
0.8. Size:463K sanyo
2sc5264.pdf 
Ordering number:ENN5287NPN Triple Diffused Planar Silicon Transistor2SC5264Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079C Adoption of MBIT process.[2SC5264]4.510.02.83.20.91.20.70.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55SANYO :
0.9. Size:42K sanyo
2sc5264ls.pdf
Ordering number:ENN5287ANPN Triple Diffused Planar Silicon Transistor2SC5264LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5264]10.0 4.53.22.80.91.2 1.20.75 0.71 : Base1 2 32 : Collector3 : Emitter2.55 2.55Spe
0.10. Size:112K sanyo
2sc5265.pdf
Ordering number:EN5321NPN Triple Diffused Planar Silicon Transistor2SC5265Inverter-controlled Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1200V).unit:mm High reliability (Adoption of HVP process).2079B Adoption of MBIT process.[2SC5265]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : Emitter2.55 2.55
0.11. Size:31K sanyo
2sc5265ls.pdf
Ordering number : ENN5321A2SC5265LSNPN Triple Diffused Planar Silicon Transistor2SC5265LSInverter-Controlled Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage(VCBO=1200V).unit : mm High reliability(Adoption of HVP process).2079D Adoption of MBIT process.[2SC5265LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Base2 : Collector
0.12. Size:209K inchange semiconductor
2sc5265.pdf
isc Silicon NPN Power Transistor 2SC5265DESCRIPTIONHigh Breakdown Voltage-(Vcb=1200V) High ReliabilityAdoption of MBIT processMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverter-controlledLightingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-E
Datasheet: 2SC524M
, 2SC524O
, 2SC524R
, 2SC525
, 2SC5250
, 2SC5251
, 2SC525O
, 2SC525R
, 2SC5198
, 2SC526M
, 2SC527
, 2SC5271
, 2SC5273
, 2SC528
, 2SC5287
, 2SC529
, 2SC529A
.
History: 2SC2338
| DDTA143ECA
| BFQ268
| 2SC3460
| MJE13003G
| NB223HG
Keywords - 2SC526 transistor datasheet
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2SC526 equivalent finder
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