2SC536NP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC536NP
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.4 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 6 pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar 2SC536NP
2SC536NP Datasheet (PDF)
2sa608n 2sc536n.pdf
Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441
2sa608 2sc536n.pdf
Ordering number:ENN6324PNP/NPN Epitaxial Planar Silicon Transistors2SA608N/2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to highunit:mmfrequency range.2164[2SA608N/2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.450.51.270.45 0.441 2 31 : Emitter
2sc536n.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC536N TRANSISTOR (NPN)TO 92 FEATURES 1. EMITTER Large Current Capacity and Wide ASO.2. COLLECTORAPPLICATIONS 3. BASE Capable of Being Used in The Low Frequency to HighFrequency Range. Equivalent Circuit C536N=Device code C536NSolid dot=Green molding compound devi
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
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