2SC536NP Specs and Replacement
Type Designator: 2SC536NP
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO92
2SC536NP Substitution
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2SC536NP datasheet
Ordering number ENN6324A 2SA608N / 2SC536N PNP / NPN Epitaxial Planar Silicon Transistors 2SA608N / 2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2205 [2SA608N / 2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.5 0.45 0.44 1 ... See More ⇒
Ordering number ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions Capable of being used in the low frequency to high unit mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 Emitter ... See More ⇒
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC536N TRANSISTOR (NPN) TO 92 FEATURES 1. EMITTER Large Current Capacity and Wide ASO. 2. COLLECTOR APPLICATIONS 3. BASE Capable of Being Used in The Low Frequency to High Frequency Range. Equivalent Circuit C536N=Device code C536N Solid dot=Green molding compound devi... See More ⇒
Detailed specifications: 2SC532, 2SC533, 2SC5333, 2SC534, 2SC535, 2SC535P, 2SC536, 2SC536KNP, TIP41, 2SC536P, 2SC536SP, 2SC537, 2SC5370O, 2SC5370R, 2SC5370Y, 2SC537P, 2SC538
Keywords - 2SC536NP pdf specs
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History: RN1101CT | RT5N14BC | RT5N234C | FX107C | RTBN131AP1 | TT2142 | 2SC536KNP
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