All Transistors. 2SC536NP Datasheet

 

2SC536NP Datasheet and Replacement


   Type Designator: 2SC536NP
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO92
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2SC536NP Datasheet (PDF)

 7.1. Size:36K  sanyo
 2sa608n 2sc536n.pdf pdf_icon

2SC536NP

Ordering number : ENN6324A2SA608N / 2SC536NPNP / NPN Epitaxial Planar Silicon Transistors2SA608N / 2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to high unit : mmfrequency range. 2205[2SA608N / 2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.50.450.441

 7.2. Size:40K  sanyo
 2sa608 2sc536n.pdf pdf_icon

2SC536NP

Ordering number:ENN6324PNP/NPN Epitaxial Planar Silicon Transistors2SA608N/2SC536NLow-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions Capable of being used in the low frequency to highunit:mmfrequency range.2164[2SA608N/2SC536N]4.5Features3.7 3.5 Large current capacity and wide ASO.0.450.51.270.45 0.441 2 31 : Emitter

 7.3. Size:442K  jiangsu
 2sc536n.pdf pdf_icon

2SC536NP

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC536N TRANSISTOR (NPN)TO 92 FEATURES 1. EMITTER Large Current Capacity and Wide ASO.2. COLLECTORAPPLICATIONS 3. BASE Capable of Being Used in The Low Frequency to HighFrequency Range. Equivalent Circuit C536N=Device code C536NSolid dot=Green molding compound devi

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Keywords - 2SC536NP transistor datasheet

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