2SC54 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT

2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT

2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications Unit: mmHigh-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications Excellent switching times: tr = 0.2 s (typ.), tf = 0.15 s (typ.) High collector breakdown voltage: VCEO = 450 V Maximum Ratings (Tc = 25C) Characteristics

2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat)MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 1500 VCollecto

2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications High Speed DC-DC Converter Applications Excellent switching times: tr = 0.7 s (max) t = 0.5 s (max) (I = 0.08 A) f C High collector breakdown voltage: V = 800 V CEOMaximum Ratings (Ta = 25C) Cha

2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Unit: mm Applications DC-DC Converter Applications DC-AC Inverter Applications Excellent switching times: tr = 0.5 s (max) t = 0.3 s (max) (I = 0.4 A) f C High collector breakdown voltage: V = 400 V CEOMaximum Ratings

2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

2SC5464FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464FT VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3

2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) fMAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITColl

2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high gain. NF = 1.1dB, |S |2 = 12dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : V = 3 V (Max.) CE (sat) High Speed : t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA

Ordering number : ENA1080 2SC5415ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Low-Noise2SC5415AAmplifier ApplicationsFeatures High gain : S21e2=9dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VC

Ordering number:ENN5817ANPN Triple Diffused Planar Silicon Transistor2SC5417LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5417]10.0 4.53.22.80.91.2 1.20.75 0.71 2 3 1:Base2:Collector3:EmitterSpecifications2.55 2.55SANYO:T

Ordering number:ENN6288NPN Epitaxial Planar Silicon Transistor2SC5488VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.0dB typ (f=1GHz).unit:mm2 High gain : S21e =12dB typ (f=1GHz).2159 High cutoff frequency : fT=7GHz typ.[2SC5488] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.10

Ordering number:EN5762NPN Triple Diffused Planar Silicon Transistor2SC5420Inverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO=1000V).unit:mm High reliability (Adoption of HVP process).2069B Adoption of MBIT process.[2SC5420]10.24.51.31 2 30 to 0.30.81.20.42.55 2.551 : Base2 : Collector3 : EmitterSANYO : SM

Ordering number:EN5957ANPN Triple Diffused Planar Silicon Transistor2SC5452Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2039D High reliability (Adoption of HVP process).[2SC5452] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.6

Ordering number:ENN6289NPN Epitaxial Planar Silicon Transistor2SC5490UHF to S BandLow-Noise Amplifier ApplicationsFeatures Package Dimensions Low noise : NF=0.9dB typ (f=1GHz).unit:mm: NF=1.4dB typ (f=1.5GHz).21592 High gain : S21e =10dB typ (f=1.5GHz).[2SC5490] High cutoff frequency : fT=11GHz typ. Ultrasmall, slim flat-lead package.1.4(1.4mm

Ordering number:EN5958NPN Triple Diffused Planar Silicon Transistor2SC5453Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2048B High reliability (Adoption of HVP process).[2SC5453] Adoption of MBIT process.20.0 3.35.02.03.40.61.21 : Base

Ordering number:EN6101NPN Triple Diffused Planar Silicon Transistor2SC5443Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5443] Adoption of MBIT process.20.03.35.02.03.40.6

Ordering number : ENA1081 2SC5414ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorHigh-Frequency Low-Noise2SC5414AAmplifier ApplicationsFeatures High gain : S21e2=9.5dB typ (f=1GHz). High cut-off frequency : fT=6.7GHz typ.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage

Ordering number : ENA1089 2SC5488ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorVHF to UHF Wide-Band Low-Noise2SC5488AAmplifier ApplicationsFeatures Low-noise : NF=1.0dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High cut-off frequency : fT=7GHz typ. Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm). Halogen fr

Ordering number:EN5955NPN Triple Diffused Planar Silicon Transistor2SC5450Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2039D High reliability (Adoption of HVP process).[2SC5450] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.6

Ordering number:EN6069NPN Epitaxial Planar Silicon Darlington Transistor2SC547685V/3A Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC5476]Features4.510.02.8 High DC current gain.3.2 Large current capacity and wide ASO. Contains a Zener d

Ordering number:EN5956NPN Triple Diffused Planar Silicon Transistor2SC5451Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed.unit:mm High breakdown voltage (VCBO=1600V).2039D High reliability (Adoption of HVP process).[2SC5451] Adoption of MBIT process.16.05.63.43.12.82.0 2.01.00.6

Ordering number : ENA1091 2SC5490ASANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon TransistorUHF to S-Band Low-Noise Amplifier2SC5490AApplicationsFeatures Low-noise : NF=0.9dB typ (f=1GHz).: NF=1.4dB typ (f=1.5GHz). Low-voltage, low-current operation (VCE=1V, IC=1mA).: fT=3.5GHz typ.: S21e2=5.5dB typ (f=1.5GHz). High gain : S21e2=10dB typ

Ordering number : EN5696NPN Triple Diffused Planar Silicon Transistor2SC5416Inverter Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage.unit: mm High reliability (Adoption of HVP process).2079B-TO220FI (LS) Adoption of MBIT process.[2SC5416]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : EmitterSANYO : TO220FI

Ordering number : EN5817NPN Triple Diffused Planar Silicon Transistor2SC5417Inverter Lighting ApplicationsFeaturesPackage Dimensions High breakdown voltage.unit: mm High reliability (Adoption of HVP process).2079B-TO220FI (LS) Adoption of MBIT process.[2SC5417]4.510.02.83.20.90.71.20.751 : Base1 2 32 : Collector3 : EmitterSANYO : TO220FI

Ordering number:ENN5910NPN Epitaxial Planar Silicon Transistor2SC5414High-FrequencyLow-Noise Amplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =9.5dB typ (f=1GHz).unit:mm High cutoff frequency : fT=6.7GHz typ.2004B[2SC5414]5.04.04.00.450.50.440.451 : Base1 2 32 : Emitter3 : Collector1.3 1.3SANYO : NPSpecifications

Ordering number:ENN6339NPN Epitaxial Planar Silicon Transistor2SC5489VHF to UHF Low-Noise Wide-BandAmplifier ApplicationsFeatures Package Dimensions Low noise : NF=1.2dB typ (f=1GHz).unit:mm2 High gain : S21e =13dB typ (f=1GHz).2159 High cutoff frequency : fT=9.0GHz typ.[2SC5489] Ultrasmall, slim flat-lead package.(1.4mm 0.8mm 0.6mm)1.40.

Ordering number:EN6102NPN Triple Diffused Planar Silicon Transistor2SC5444Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High speed (tf=100ns typ).unit:mm High breakdown voltage (VCBO=1500V).2048B High reliability (Adoption of HVP process).[2SC5444] Adoption of MBIT process.20.03.35.02.03.40.6

Ordering number:ENN5911NPN Epitaxial Planar Silicon Transistor2SC5415High-FrequencyLow-Noise Amplifier ApplicationsFeatures Package Dimensions2 High gain : S21e =9dB typ (f=1GHz).unit:mm High cutoff frequency : fT=6.7GHz typ.2038A[2SC5415]4.51.51.60.4 0.53 2 10.41.53.01 : Base0.752 : Collector3 : EmitterSANYO : PCPSpecifications(B

Ordering number:ENN5696ANPN Triple Diffused Planar Silicon Transistor2SC5416LSInverter Lighting ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability (Adoption of HVP process).2079D Adoption of MBIT process.[2SC5416]10.0 4.53.22.80.91.2 1.20.75 0.71:Base1 2 32:Collector3:EmitterSpecifications2.55 2.55SANYO:

DATA SHEETNPN SILICON RF TRANSISTOR2SC5436NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5186 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5436 50 pcs (Non reel) 8 mm wide embossed taping2S

DATA SHEETNPN SILICON RF TRANSISTOR2SC5431NPN EPITAXIAL SILICON TRANSISTORFOR UHF TUNER OSC/MIXFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5004 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5431 50 pcs (Non reel) 8 mm wide embossed taping2SC5431-T1 3 kpcs/reel

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5408NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE HIGH-GAIN AMPLIFICATIONFEATURE PACKAGE DIMENSIONS (in mm) High fT17 GHz TYP.2.10.1 High gain1.250.1|S21e|2 = 15.5 dB TYP.@f = 2 GHz, VCE = 2 V, IC = 7 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA 6-pin Small Mini Mold PackageORDERING INFORMATIONPART NUM

DATA SHEETNPN SILICON RF TRANSISTOR2SC5437NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5195 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5437 50 pcs (Non reel) 8 mm wide embossed taping2S

DATA SHEETNPN SILICON RF TRANSISTOR2SC5432NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5006 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5432 50 pcs (Non reel) 8 mm wide embossed taping2S

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5455NPN EPITAXIAL SILICON TRANSISTOR4-PIN MINI MOLDFEATURE PACKAGE DIMENSIONS (in mm) Ideal for medium-output applications+0.22.8 0.3+0.2 High gain, low noise1.5 0.1 Small reverse transfer capacitance Can operate at low voltageABSOLUTE MAXIMUM RATINGS (TA = 25 C)PARAMETER SYMBOL RATING UNITCollector t

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5454NPN EPITAXIAL SILICON TRANSISTOR4-PIN MINI MOLDFEATURE PACKAGE DIMENSIONS (in mm) High gain, low noise+0.22.8 0.3+0.2 Small reverse transfer capacitance1.5 0.1 Can operate at low voltageABSOLUTE MAXIMUM RATINGS (TA = 25 C)PARAMETER SYMBOL RATING UNITCollector to Base Voltage VCBO 9V5 5Collector

DATA SHEETNPN SILICON RF TRANSISTOR2SC5434NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5008 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5434 50 pcs (Non reel) 8 mm wide embossed taping2S

PRELIMINARY DATA SHEETSILICON TRANSISTOR2SC5409NPN EPITAXIAL SILICON TRANSISTORFOR MICROWAVE HIGH-GAIN AMPLIFICATIONFEATURE PACKAGE DIMENSIONS (in mm) High fT16 GHz TYP.2.10.1 High gain1.250.1|S21e|2 = 14 dB TYP.@f = 2 GHz, VCE = 2 V, IC = 20 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA 6-pin Small Mini Mold PackageORDERING INFORMATIONPART NUMB

DATA SHEETNPN SILICON RF TRANSISTOR2SC5435NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5010 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5435 50 pcs (Non reel) 8 mm wide embossed taping2S

DATA SHEETNPN SILICON RF TRANSISTOR2SC5433NPN EPITAXIAL SILICON TRANSISTORFOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATIONFLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLDFEATURES Contains same chip as 2SC5007 Flat-lead 3-pin thin-type ultra super minimold packageORDERING INFORMATIONPart Number Quantity Supplying Form2SC5433 50 pcs (Non reel) 8 mm wide embossed taping2S

Ordering number : ENA1080A2SC5415ARF Transistorhttp://onsemi.com12V, 100mA, fT=6.7GHz, NPN Single PCPFeatures High gain 2 : S21e =9dB typ (f=1GHz) High cut-off frequency : fT=6.7GHz typSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 20 VCollector-to-Emitter Voltage VCEO 12 VEmitter-

Ordering number : ENA1089A2SC5488ARF Transistorhttp://onsemi.com10V, 70mA, fT=7GHz, NPN Single SSFPFeatures Low-noise : NF=1.0dB typ (f=1GHz) High gain 2 : S21e =12dB typ (f=1GHz) High cut-off frequency : fT=7GHz typ Ultrasmall, slim flat-lead package (1.4mm0.8mm0.6mm) Halogen free complianceSpecificationsAbsolute Maximum Ratings at Ta=25

Ordering number : ENA1091A2SC5490ARF Transistorhttp://onsemi.com10V, 30mA, fT=8GHz, NPN Single SSFPFeatures Low-noise : NF=0.9dB typ (f=1GHz) : NF=1.4dB typ (f=1.5GHz) Low-voltage, low-current operation (VCE=1V, IC=1mA) : fT=3.5GHz typ : S21e =5.5dB typ (f=1.5GHz) 2 High gain 2 : S21e =10dB typ (f=1.5GHz) High cut-off frequency : fT=8GHz t

Transistor2SC5419Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symb

Transistor2SC5472 (Tentative)Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT.1High gain of 8.2dB and low noise of 1.8dB at 3V.Optimum for RF amplification of a portable telephone and3pager.2S-Mini type package, allowing downsizing of the equipment anda

Power Transistors2SC5418Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

Transistor2SC5473 (Tentative)Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.10.425 1.25 0.10 0.425FeaturesHigh transition frequency fT.High gain of 8.9dB and low noise of 1.8dB at 3V.Optimum for RF amplification of a portable telephone andpager.S-Mini type package, allowing downsizing of the equipment andautomatic

Transistor2SC5473 (Tentative)Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm2.1 0.10.425 1.25 0.10 0.425FeaturesHigh transition frequency fT.High gain of 8.9dB and low noise of 1.8dB at 3V.Optimum for RF amplification of a portable telephone andpager.S-Mini type package, allowing downsizing of the equipment andautomatic

Transistor2SC5474 (Tentative)Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT. 1High gain of 8.9dB and low noise of 1.8dB at 3V.Optimum for RF amplification of a portable telephone and3pager.SS-Mini type package, allowing downsizing of the equipment2and aut

Power Transistors2SC5406, 2SC5406ASilicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=

Power Transistors2SC5478Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

Transistors2SC5472Silicon NPN epitaxial planer typeUnit: mmFor low-voltage low-noise high-frequency oscillation0.3+0.1 0.15+0.100.050.03 Features High transition frequency fT High gain of 8.2 dB and low noise of 1.8 dB at 3 V1 2 Optimum for RF amplification of a portable telephone and pager(0.65) (0.65) S-mini type package, allowing downsizing of

Power Transistors2SC5423Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

Power Transistors2SC54402SC54402SC54402SC54402SC5440Silicon NPN triple diffusion mesa typeUnit: mm15.50.5 3.00.3 3.20.1For horizontal deflection output55 Features High breakdown voltage, and high reliability through the use of a5glass passivation layer5(4.0) High-speed switching52.00.2 Wide area of safe operation (ASO)1.

Transistor2SC5419Silicon NPN triple diffusion planer typeFor low-frequency output amplificationUnit: mm2.5 0.11.056.9 0.1 0.05 (1.45)0.7 4.0 0.8FeaturesHigh collector to emitter voltage VCEO.High transition frequency fT. 0.65 max.Allowing supply with the radial taping.+0.1 Absolute Maximum Ratings (Ta=25C) 0.450.052.5 0.5 2.5 0.5Parameter Symb

Power Transistors2SC5405Silicon NPN triple diffusion planar typeFor high-speed switching and high current amplification ratioUnit: mmFeatures 4.6 0.29.9 0.32.9 0.2High-speed switchingHigh forward current transfer ratio hFE which has satisfactory 3.2 0.1linearityDielectric breakdown voltage of the package: > 5kV1.4 0.22.6 0.1Absolute Maximum Ratings (T

Power Transistors2SC5412Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

Power Transistors2SC5407Silicon NPN triple diffusion mesa typeFor horizontal deflection outputUnit: mm15.5 0.5 3.0 0.3 3.2 0.1Features5 5High breakdown voltage, and high reliability through the use of aglass passivation layerHigh-speed switching5Wide area of safe operation (ASO)54.052.0 0.21.1 0.1Absolute Maximum Ratings (TC=25C)0.

Transistor2SC5474 (Tentative)Silicon NPN epitaxial planer typeFor low-voltage low-noise high-frequency oscillationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT. 1High gain of 8.9dB and low noise of 1.8dB at 3V.Optimum for RF amplification of a portable telephone and3pager.SS-Mini type package, allowing downsizing of the equipment2and aut

Power Transistors2SC5457Silicon NPN triple diffusion planar typeUnit: mm6.5 0.12.3 0.15.3 0.1For high breakdown voltage high-speed switching4.35 0.10.5 0.1Features1.0 0.10.1 0.050.93 0.1High-speed switching0.5 0.10.75 0.1High collector to base voltage VCBO2.3 0.1 4.6 0.1Wide area of safe operation (ASO)Satisfactory linearity of f

2SC5449Silicon NPN Triple DiffusedCharacter Display Horizntal Deflection OutputADE-208-578 B (Z)3rd. EditionSeptember 1997Features High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.15 sec (typ.) at fH = 64 kHz Isolated packageTO3PFMOutlineTO3PFM 1. Base2. Collector13. Emitter232SC5449Absolute Maximum Ratings (Ta = 25C)

2SC5480Silicon NPN Triple DiffusedHorizntal Deflection OutputADE-208-632 (Z)1st. EditionOct. 1, 1998Features High breakdown voltageVCES = 1500 V Isolated packageTO3PFM Built-in damper diodeOutlineTO3PFMC21B1.Base32.CollectorE13.Emitter232SC5480Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector to emit

2SC5448Silicon NPN Triple DiffusedCharacter Display Horizntal Deflection OutputADE-208-577 B (Z)3rd. EditionSeptember 1997Features High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.15 sec (typ.) at fH = 64 kHz Isolated packageTO3PFMOutlineTO3PFM 1. Base2. Collector13. Emitter232SC5448Absolute Maximum Ratings (Ta = 25C)

2SC5470Silicon NPN Triple DiffusedCharacter Display Horizontal Deflection OutputADE-208-672 (Z)1st. EditionOct. 1, 1998Features High breakdown voltageVCBO = 1500 V High speed switchingtf = 0.15 sec(typ.) at fH=64kHzOutlineTO3PFM 1. Base2. Collector13. Emitter232SC5470Absolute Maximum Ratings (Ta = 25 C)Item Symbol Ratings UnitCollector

2SC5447Silicon NPN Triple DiffusedCharacter Display Horizntal Deflection OutputADE-208-576 B (Z)3rd. EditionSeptember 1997Features High breakdown voltageVCES = 1500 V High speed switchingtf = 0.15 sec (typ.) at fH = 64 kHz Isolated packageTO3PFMOutlineTO3PFMC21B1. Base32. CollectorE13. Emitter232SC5447Absolute Maximum Rat

Transistors22-1 Power Transistors ............................................................................................. 142-1-1 Transistors for Audio Amplifiers ................................................................ 14 Complementary Transistors for Output ......................................................... 14 Complementary Transistors for Output built-in

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

http://www.idc-com.co.jp 854-0065 6-41

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

JMnic Product Specification Silicon NPN Power Transistors 2SC5439 DESCRIPTION With TO-220F package High collector breakdown voltage Excellent switching times APPLICATIONS Switching regulator applications High voltage switching applications DC-DC converter applications Inverter lighting applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simpli

JMnic Product Specification Silicon NPN Power Transistors 2SC5416 DESCRIPTION With TO-220F package High breakdown voltage High reliability APPLICATIONS For inverter lighting applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

JMnic Product Specification Silicon NPN Power Transistors 2SC5417 DESCRIPTION With TO-220F package High breakdown voltage High reliability APPLICATIONS For inverter lighting applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITV

JMnic Product Specification Silicon NPN Power Transistors 2SC5404 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Low collector saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,color TV High speed switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3P(H)IS) and symb

SMD Type TransistorsNPN Transistors2SC5477SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

SMD Type TransistorsNPN Transistors2SC5415SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5449DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSCharacter display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5480DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching SpeedBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output stageapplications.ABSOLUTE MAXIMUM RATINGS(T

isc Silicon NPN Power Transistor 2SC5411DESCRIPTIONWith TO-3PFa packagingHigh collector-base voltageHigh power dissipationLow saturation voltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCB

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5439DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator applications.High voltage switching applications.DC-DC converter applica

isc Silicon NPN Power Transistor 2SC5450DESCRIPTIONHigh Breakdown Voltage-: V = 1600V (Min)CBOHigh Speed SwitchingHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection outputColor display horizontal deflection outputABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5416DESCRIPTIONNPN triple diffused planar silicon transistorLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverter lighting applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC5417DESCRIPTIONNPN triple diffused planar silicon transistorLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSInverter lighting applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Ba

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5463DESCRIPTIONLow Noise FigureNF = 1.1 dB TYP. @V = 8 V, I = 5 mA, f = 1 GHzCE CHigh GainS 2 = 12 dB TYP. @V = 8 V, I = 15 mA, f = 1 GHz21e CE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF~ UHF band low noi

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5404DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal output applications for medium resolutiondisplay &

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5407DESCRIPTIONHigh Breakdown VoltageHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for horizontal deflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME