2SC54. Аналоги и основные параметры
Наименование производителя: 2SC54
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 35 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 175 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hFE): 50
Корпус транзистора: TO18
Аналоги (замена) для 2SC54
- подборⓘ биполярного транзистора по параметрам
2SC54 даташит
2sc5445.pdf
2SC5445 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5445 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT
2sc5446.pdf
2SC5446 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5446 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t (2) = 0.1 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT
2sc5411.pdf
2SC5411 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5411 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA
2sc5439.pdf
2SC5439 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5439 Switching Regulator Applications Unit mm High-Voltage Switching Applications DC-DC Converter Applications Inverter Lighting Applications Excellent switching times tr = 0.2 s (typ.), tf = 0.15 s (typ.) High collector breakdown voltage VCEO = 450 V Maximum Ratings (Tc = 25 C) Characteristics
2sc5421.pdf
2SC5421 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5421 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 1500 V Collecto
2sc5465.pdf
2SC5465 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5465 Industrial Applications Switching Regulator and High Voltage Switching Unit mm Applications High Speed DC-DC Converter Applications Excellent switching times tr = 0.7 s (max) t = 0.5 s (max) (I = 0.08 A) f C High collector breakdown voltage V = 800 V CEO Maximum Ratings (Ta = 25 C) Cha
2sc5458.pdf
2SC5458 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5458 Industrial Applications Switching Regulator and High Voltage Switching Unit mm Applications DC-DC Converter Applications DC-AC Inverter Applications Excellent switching times tr = 0.5 s (max) t = 0.3 s (max) (I = 0.4 A) f C High collector breakdown voltage V = 400 V CEO Maximum Ratings
2sc5464.pdf
2SC5464 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C
2sc5464ft.pdf
2SC5464FT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5464FT VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3
2sc5422.pdf
2SC5422 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5422 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1700 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Coll
2sc5463.pdf
2SC5463 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5463 VHF UHF Band Low Noise Amplifier Applications Unit mm Low noise figure, high gain. NF = 1.1dB, S 2 = 12dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V C
2sc5404.pdf
2SC5404 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5404 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage VCBO = 1500 V Low Saturation Voltage V = 3 V (Max.) CE (sat) High Speed t = 0.15 s (Typ.) f Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RA
2sc5415a.pdf
Ordering number ENA1080 2SC5415A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise 2SC5415A Amplifier Applications Features High gain S21e 2=9dB typ (f=1GHz). High cut-off frequency fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VC
2sc5417ls.pdf
Ordering number ENN5817A NPN Triple Diffused Planar Silicon Transistor 2SC5417LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5417] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 Base 2 Collector 3 Emitter Specifications 2.55 2.55 SANYO T
2sc5488.pdf
Ordering number ENN6288 NPN Epitaxial Planar Silicon Transistor 2SC5488 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.0dB typ (f=1GHz). unit mm 2 High gain S21e =12dB typ (f=1GHz). 2159 High cutoff frequency fT=7GHz typ. [2SC5488] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm) 1.4 0.1 0
2sc5420.pdf
Ordering number EN5762 NPN Triple Diffused Planar Silicon Transistor 2SC5420 Inverter Lighting Applications Features Package Dimensions High breakdown voltage (VCBO=1000V). unit mm High reliability (Adoption of HVP process). 2069B Adoption of MBIT process. [2SC5420] 10.2 4.5 1.3 1 2 3 0 to 0.3 0.8 1.2 0.4 2.55 2.55 1 Base 2 Collector 3 Emitter SANYO SM
2sc5452.pdf
Ordering number EN5957A NPN Triple Diffused Planar Silicon Transistor 2SC5452 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5452] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6
2sc5453.pdf
Ordering number EN5958 NPN Triple Diffused Planar Silicon Transistor 2SC5453 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2048B High reliability (Adoption of HVP process). [2SC5453] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 Base
2sc5443.pdf
Ordering number EN6101 NPN Triple Diffused Planar Silicon Transistor 2SC5443 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5443] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6
2sc5414a.pdf
Ordering number ENA1081 2SC5414A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise 2SC5414A Amplifier Applications Features High gain S21e 2=9.5dB typ (f=1GHz). High cut-off frequency fT=6.7GHz typ. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage
2sc5488a.pdf
Ordering number ENA1089 2SC5488A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor VHF to UHF Wide-Band Low-Noise 2SC5488A Amplifier Applications Features Low-noise NF=1.0dB typ (f=1GHz). High gain S21e 2=12dB typ (f=1GHz). High cut-off frequency fT=7GHz typ. Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm). Halogen fr
2sc5450.pdf
Ordering number EN5955 NPN Triple Diffused Planar Silicon Transistor 2SC5450 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5450] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6
2sc5476.pdf
Ordering number EN6069 NPN Epitaxial Planar Silicon Darlington Transistor 2SC5476 85V/3A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC5476] Features 4.5 10.0 2.8 High DC current gain. 3.2 Large current capacity and wide ASO. Contains a Zener d
2sc5451.pdf
Ordering number EN5956 NPN Triple Diffused Planar Silicon Transistor 2SC5451 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1600V). 2039D High reliability (Adoption of HVP process). [2SC5451] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6
2sc5490a.pdf
Ordering number ENA1091 2SC5490A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor UHF to S-Band Low-Noise Amplifier 2SC5490A Applications Features Low-noise NF=0.9dB typ (f=1GHz). NF=1.4dB typ (f=1.5GHz). Low-voltage, low-current operation (VCE=1V, IC=1mA). fT=3.5GHz typ. S21e 2=5.5dB typ (f=1.5GHz). High gain S21e 2=10dB typ
2sc5416.pdf
Ordering number EN5696 NPN Triple Diffused Planar Silicon Transistor 2SC5416 Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit mm High reliability (Adoption of HVP process). 2079B-TO220FI (LS) Adoption of MBIT process. [2SC5416] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter SANYO TO220FI
2sc5417.pdf
Ordering number EN5817 NPN Triple Diffused Planar Silicon Transistor 2SC5417 Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit mm High reliability (Adoption of HVP process). 2079B-TO220FI (LS) Adoption of MBIT process. [2SC5417] 4.5 10.0 2.8 3.2 0.9 0.7 1.2 0.75 1 Base 1 2 3 2 Collector 3 Emitter SANYO TO220FI
2sc5414.pdf
Ordering number ENN5910 NPN Epitaxial Planar Silicon Transistor 2SC5414 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain S21e =9.5dB typ (f=1GHz). unit mm High cutoff frequency fT=6.7GHz typ. 2004B [2SC5414] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Base 1 2 3 2 Emitter 3 Collector 1.3 1.3 SANYO NP Specifications
2sc5489.pdf
Ordering number ENN6339 NPN Epitaxial Planar Silicon Transistor 2SC5489 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions Low noise NF=1.2dB typ (f=1GHz). unit mm 2 High gain S21e =13dB typ (f=1GHz). 2159 High cutoff frequency fT=9.0GHz typ. [2SC5489] Ultrasmall, slim flat-lead package. (1.4mm 0.8mm 0.6mm) 1.4 0.
2sc5444.pdf
Ordering number EN6102 NPN Triple Diffused Planar Silicon Transistor 2SC5444 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2048B High reliability (Adoption of HVP process). [2SC5444] Adoption of MBIT process. 20.0 3.3 5.0 2.0 3.4 0.6
2sc5415.pdf
Ordering number ENN5911 NPN Epitaxial Planar Silicon Transistor 2SC5415 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions 2 High gain S21e =9dB typ (f=1GHz). unit mm High cutoff frequency fT=6.7GHz typ. 2038A [2SC5415] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2 Collector 3 Emitter SANYO PCP Specifications (B
2sc5416ls.pdf
Ordering number ENN5696A NPN Triple Diffused Planar Silicon Transistor 2SC5416LS Inverter Lighting Applications Features Package Dimensions High breakdown voltage. unit mm High reliability (Adoption of HVP process). 2079D Adoption of MBIT process. [2SC5416] 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 Base 1 2 3 2 Collector 3 Emitter Specifications 2.55 2.55 SANYO
2sc5436.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5436 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5186 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5436 50 pcs (Non reel) 8 mm wide embossed taping 2S
2sc5431.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5431 NPN EPITAXIAL SILICON TRANSISTOR FOR UHF TUNER OSC/MIX FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5004 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5431 50 pcs (Non reel) 8 mm wide embossed taping 2SC5431-T1 3 kpcs/reel
2sc5408.pdf
PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5408 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) High fT 17 GHz TYP. 2.1 0.1 High gain 1.25 0.1 S21e 2 = 15.5 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 7 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA 6-pin Small Mini Mold Package ORDERING INFORMATION PART NUM
2sc5437.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5437 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5195 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5437 50 pcs (Non reel) 8 mm wide embossed taping 2S
2sc5432.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5432 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5006 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5432 50 pcs (Non reel) 8 mm wide embossed taping 2S
2sc5455.pdf
PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5455 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS (in mm) Ideal for medium-output applications +0.2 2.8 0.3 +0.2 High gain, low noise 1.5 0.1 Small reverse transfer capacitance Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector t
2sc5454.pdf
PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD FEATURE PACKAGE DIMENSIONS (in mm) High gain, low noise +0.2 2.8 0.3 +0.2 Small reverse transfer capacitance 1.5 0.1 Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9V 5 5 Collector
2sc5434.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5434 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5008 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5434 50 pcs (Non reel) 8 mm wide embossed taping 2S
2sc5409.pdf
PRELIMINARY DATA SHEET SILICON TRANSISTOR 2SC5409 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURE PACKAGE DIMENSIONS (in mm) High fT 16 GHz TYP. 2.1 0.1 High gain 1.25 0.1 S21e 2 = 14 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA NF = 1.1 dB, @f = 2 GHz VCE = 2 V, IC = 3 mA 6-pin Small Mini Mold Package ORDERING INFORMATION PART NUMB
2sc5435.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5435 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5010 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5435 50 pcs (Non reel) 8 mm wide embossed taping 2S
2sc5433.pdf
DATA SHEET NPN SILICON RF TRANSISTOR 2SC5433 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES Contains same chip as 2SC5007 Flat-lead 3-pin thin-type ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5433 50 pcs (Non reel) 8 mm wide embossed taping 2S
2sc5415ae 2sc5415af.pdf
Ordering number ENA1080A 2SC5415A RF Transistor http //onsemi.com 12V, 100mA, fT=6.7GHz, NPN Single PCP Features High gain 2 S21e =9dB typ (f=1GHz) High cut-off frequency fT=6.7GHz typ Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-
2sc5488a.pdf
Ordering number ENA1089A 2SC5488A RF Transistor http //onsemi.com 10V, 70mA, fT=7GHz, NPN Single SSFP Features Low-noise NF=1.0dB typ (f=1GHz) High gain 2 S21e =12dB typ (f=1GHz) High cut-off frequency fT=7GHz typ Ultrasmall, slim flat-lead package (1.4mm 0.8mm 0.6mm) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25
2sc5490a.pdf
Ordering number ENA1091A 2SC5490A RF Transistor http //onsemi.com 10V, 30mA, fT=8GHz, NPN Single SSFP Features Low-noise NF=0.9dB typ (f=1GHz) NF=1.4dB typ (f=1.5GHz) Low-voltage, low-current operation (VCE=1V, IC=1mA) fT=3.5GHz typ S21e =5.5dB typ (f=1.5GHz) 2 High gain 2 S21e =10dB typ (f=1.5GHz) High cut-off frequency fT=8GHz t
2sc5419.pdf
Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. High transition frequency fT. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symb
2sc5472 e.pdf
Transistor 2SC5472 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.1 0.425 Features High transition frequency fT. 1 High gain of 8.2dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. 2 S-Mini type package, allowing downsizing of the equipment and a
2sc5418.pdf
Power Transistors 2SC5418 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5473 e.pdf
Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.10 0.425 Features High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic
2sc5473.pdf
Transistor 2SC5473 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 2.1 0.1 0.425 1.25 0.10 0.425 Features High transition frequency fT. High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and pager. S-Mini type package, allowing downsizing of the equipment and automatic
2sc5474 e.pdf
Transistor 2SC5474 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. SS-Mini type package, allowing downsizing of the equipment 2 and aut
2sc5406.pdf
Power Transistors 2SC5406, 2SC5406A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=
2sc5478.pdf
Power Transistors 2SC5478 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5472.pdf
Transistors 2SC5472 Silicon NPN epitaxial planer type Unit mm For low-voltage low-noise high-frequency oscillation 0.3+0.1 0.15+0.10 0.05 0.0 3 Features High transition frequency fT High gain of 8.2 dB and low noise of 1.8 dB at 3 V 1 2 Optimum for RF amplification of a portable telephone and pager (0.65) (0.65) S-mini type package, allowing downsizing of
2sc5423.pdf
Power Transistors 2SC5423 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5440.pdf
Power Transistors 2SC5440 2SC5440 2SC5440 2SC5440 2SC5440 Silicon NPN triple diffusion mesa type Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 For horizontal deflection output 5 5 Features High breakdown voltage, and high reliability through the use of a 5 glass passivation layer 5 (4.0) High-speed switching 5 2.0 0.2 Wide area of safe operation (ASO) 1.
2sc5419 e.pdf
Transistor 2SC5419 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 2.5 0.1 1.05 6.9 0.1 0.05 (1.45) 0.7 4.0 0.8 Features High collector to emitter voltage VCEO. High transition frequency fT. 0.65 max. Allowing supply with the radial taping. +0.1 Absolute Maximum Ratings (Ta=25 C) 0.45 0.05 2.5 0.5 2.5 0.5 Parameter Symb
2sc5405.pdf
Power Transistors 2SC5405 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit mm Features 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching High forward current transfer ratio hFE which has satisfactory 3.2 0.1 linearity Dielectric breakdown voltage of the package > 5kV 1.4 0.2 2.6 0.1 Absolute Maximum Ratings (T
2sc5412.pdf
Power Transistors 2SC5412 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5407.pdf
Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit mm 15.5 0.5 3.0 0.3 3.2 0.1 Features 5 5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching 5 Wide area of safe operation (ASO) 5 4.0 5 2.0 0.2 1.1 0.1 Absolute Maximum Ratings (TC=25 C) 0.
2sc5474.pdf
Transistor 2SC5474 (Tentative) Silicon NPN epitaxial planer type For low-voltage low-noise high-frequency oscillation Unit mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High transition frequency fT. 1 High gain of 8.9dB and low noise of 1.8dB at 3V. Optimum for RF amplification of a portable telephone and 3 pager. SS-Mini type package, allowing downsizing of the equipment 2 and aut
2sc5457.pdf
Power Transistors 2SC5457 Silicon NPN triple diffusion planar type Unit mm 6.5 0.1 2.3 0.1 5.3 0.1 For high breakdown voltage high-speed switching 4.35 0.1 0.5 0.1 Features 1.0 0.1 0.1 0.05 0.93 0.1 High-speed switching 0.5 0.1 0.75 0.1 High collector to base voltage VCBO 2.3 0.1 4.6 0.1 Wide area of safe operation (ASO) Satisfactory linearity of f
2sc5449.pdf
2SC5449 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-578 B (Z) 3rd. Edition September 1997 Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 sec (typ.) at fH = 64 kHz Isolated package TO 3PFM Outline TO 3PFM 1. Base 2. Collector 1 3. Emitter 2 3 2SC5449 Absolute Maximum Ratings (Ta = 25 C)
2sc5480.pdf
2SC5480 Silicon NPN Triple Diffused Horizntal Deflection Output ADE-208-632 (Z) 1st. Edition Oct. 1, 1998 Features High breakdown voltage VCES = 1500 V Isolated package TO 3PFM Built-in damper diode Outline TO 3PFM C 2 1 B 1.Base 3 2.Collector E 1 3.Emitter 2 3 2SC5480 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to emit
2sc5448.pdf
2SC5448 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-577 B (Z) 3rd. Edition September 1997 Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 sec (typ.) at fH = 64 kHz Isolated package TO 3PFM Outline TO 3PFM 1. Base 2. Collector 1 3. Emitter 2 3 2SC5448 Absolute Maximum Ratings (Ta = 25 C)
2sc5470.pdf
2SC5470 Silicon NPN Triple Diffused Character Display Horizontal Deflection Output ADE-208-672 (Z) 1st. Edition Oct. 1, 1998 Features High breakdown voltage VCBO = 1500 V High speed switching tf = 0.15 sec(typ.) at fH=64kHz Outline TO 3PFM 1. Base 2. Collector 1 3. Emitter 2 3 2SC5470 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector
2sc5447.pdf
2SC5447 Silicon NPN Triple Diffused Character Display Horizntal Deflection Output ADE-208-576 B (Z) 3rd. Edition September 1997 Features High breakdown voltage VCES = 1500 V High speed switching tf = 0.15 sec (typ.) at fH = 64 kHz Isolated package TO 3PFM Outline TO 3PFM C 2 1 B 1. Base 3 2. Collector E 1 3. Emitter 2 3 2SC5447 Absolute Maximum Rat
2sc5487.pdf
Transistors 2 2-1 Power Transistors ............................................................................................. 14 2-1-1 Transistors for Audio Amplifiers ................................................................ 14 Complementary Transistors for Output ......................................................... 14 Complementary Transistors for Output built-in
2sc5482.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc5477.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sc5485.pdf
ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sc5439.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5439 DESCRIPTION With TO-220F package High collector breakdown voltage Excellent switching times APPLICATIONS Switching regulator applications High voltage switching applications DC-DC converter applications Inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simpli
2sc5416.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5416 DESCRIPTION With TO-220F package High breakdown voltage High reliability APPLICATIONS For inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
2sc5417.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5417 DESCRIPTION With TO-220F package High breakdown voltage High reliability APPLICATIONS For inverter lighting applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT V
2sc5404.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC5404 DESCRIPTION With TO-3P(H)IS package High voltage;high speed Low collector saturation voltage APPLICATIONS Horizontal deflection output for high resolution display,color TV High speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symb
2sc5477.pdf
SMD Type Transistors NPN Transistors 2SC5477 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc5415.pdf
SMD Type Transistors NPN Transistors 2SC5415 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=12V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 12 V Emitter - Base Voltage V
2sc5449.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5449 DESCRIPTION High Breakdown Voltage High Switching Speed Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
2sc5480.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5480 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output stage applications. ABSOLUTE MAXIMUM RATINGS(T
2sc5411.pdf
isc Silicon NPN Power Transistor 2SC5411 DESCRIPTION With TO-3PFa packaging High collector-base voltage High power dissipation Low saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CB
2sc5439.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5439 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 450V(Min) (BR)CEO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator applications. High voltage switching applications. DC-DC converter applica
2sc5450.pdf
isc Silicon NPN Power Transistor 2SC5450 DESCRIPTION High Breakdown Voltage- V = 1600V (Min) CBO High Speed Switching High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output Color display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL
2sc5416.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5416 DESCRIPTION NPN triple diffused planar silicon transistor Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverter lighting applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba
2sc5417.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC5417 DESCRIPTION NPN triple diffused planar silicon transistor Low Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Inverter lighting applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Ba
2sc5463.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC5463 DESCRIPTION Low Noise Figure NF = 1.1 dB TYP. @V = 8 V, I = 5 mA, f = 1 GHz CE C High Gain S 2 = 12 dB TYP. @V = 8 V, I = 15 mA, f = 1 GHz 21e CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF UHF band low noi
2sc5404.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5404 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal output applications for medium resolution display &
2sc5407.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5407 DESCRIPTION High Breakdown Voltage High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
Другие транзисторы: 2SC5370O, 2SC5370R, 2SC5370Y, 2SC537P, 2SC538, 2SC538A, 2SC539, 2SC539Z, TIP42C, 2SC540, 2SC541, 2SC542, 2SC543, 2SC544, 2SC545, 2SC546, 2SC547
🌐 : EN ES РУ
Список транзисторов
Обновления
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet | bc109c | d331 transistor | irfbc40 | mp16b transistor