2SC565 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC565  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO18

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2SC565 datasheet

 0.1. Size:93K  nec
 2sc5655.pdf pdf_icon

2SC565

DATA SHEET NPN SILICON RF TRANSISTOR 2SC5655 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN NON-LEAD MINIMOLD FEATURES 1006 package employed (1.0 0.6 0.5 mm) NF = 1.5 dB TYP., S21e 2 = 4.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5655 50 pcs (Non reel) 8 mm wide paper carrier taping 2SC

 0.2. Size:18K  nec
 2sc5653 ne687m23.pdf pdf_icon

2SC565

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE687M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT fT =

 0.3. Size:18K  nec
 2sc5652 ne685m23.pdf pdf_icon

2SC565

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE685M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 1 HIGH GAIN BANDWIDTH PRODUCT fT =

 0.4. Size:18K  nec
 2sc5650 ne681m23.pdf pdf_icon

2SC565

PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE681M23 OUTLINE DIMENSIONS (Units in mm) FEATURES PACKAGE OUTLINE M23 NEW MINIATURE M23 PACKAGE World's smallest transistor package footprint leads are completely underneath package body 0.5 Low profile/0.55 mm package height Ceramic substrate for better RF performance 0.25 HIGH GAIN BANDWIDTH PRODUCT 1 fT =

MOSTRAR MÁS

Otros transistores... 2SC560N, 2SC561, 2SC562, 2SC562Z, 2SC563, 2SC563A, 2SC563Z, 2SC564, C3198, 2SC566, 2SC567, 2SC568, 2SC568M, 2SC569, 2SC57, 2SC570, 2SC571