2SC583Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC583Z
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 30 V
Tensión emisor-base (Veb): 2 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 650 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO72
Búsqueda de reemplazo de 2SC583Z
2SC583Z Datasheet (PDF)
2sc5831.pdf

Ordering number : ENN72612SC5831NPN Epitaxial Planar Silicon Transistor2SC5831Driver ApplicationsPreliminaryApplications Package Dimensions Suitable for use in switching of inductive load unit : mm (motor drivers, printer hammer drivers, relay drivers). 2042B[2SC5831]8.04.0Features3.31.0 1.0 High DC current gain. Wide ASO. On-chip zener diode of 65
2sc5839.pdf

Transistors2SC5839Silicon NPN epitaxial planar typeFor low-voltage high-frequency amplification Unit: mm Features High transition frequency fT 3 2 Suitable for high-density mounting and downsizing of the equip-1ment for Ultraminiature leadless package0.39+0.011.000.05 -0.030.6 mm 1.0 mm (height 0.39 mm)0.250.05 0.250.051 Absolute Maximum Ratings
2sc5838.pdf

Transistors2SC5838Silicon NPN epitaxial planar typeFor UHF band low-noise amplification Unit: mm Features3 2 Suitable for high-density mounting and downsizing of the equip-ment for Ultraminiature leadless package10.6 mm 1.0 mm (height 0.39 mm)0.39+0.011.000.05 -0.030.250.05 0.250.051 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit
2sc5586 2sc5830 2sc5924.pdf

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Otros transistores... 2SC578 , 2SC579 , 2SC58 , 2SC580 , 2SC581 , 2SC582 , 2SC582A , 2SC583 , D667 , 2SC584 , 2SC585 , 2SC586 , 2SC587 , 2SC587A , 2SC587M , 2SC588 , 2SC589 .



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