2SC583Z Specs and Replacement
Type Designator: 2SC583Z
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 650 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO72
2SC583Z Substitution
- BJT ⓘ Cross-Reference Search
2SC583Z datasheet
Transistors 2SC5839 Silicon NPN epitaxial planar type For low-voltage high-frequency amplification Unit mm Features High transition frequency fT 3 2 Suitable for high-density mounting and downsizing of the equip- 1 ment for Ultraminiature leadless package 0.39+0.01 1.00 0.05 -0.03 0.6 mm 1.0 mm (height 0.39 mm) 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings ... See More ⇒
Transistors 2SC5838 Silicon NPN epitaxial planar type For UHF band low-noise amplification Unit mm Features 3 2 Suitable for high-density mounting and downsizing of the equip- ment for Ultraminiature leadless package 1 0.6 mm 1.0 mm (height 0.39 mm) 0.39+0.01 1.00 0.05 -0.03 0.25 0.05 0.25 0.05 1 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit ... See More ⇒
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Detailed specifications: 2SC578, 2SC579, 2SC58, 2SC580, 2SC581, 2SC582, 2SC582A, 2SC583, BC547B, 2SC584, 2SC585, 2SC586, 2SC587, 2SC587A, 2SC587M, 2SC588, 2SC589
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