2SC584 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC584
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 18 W
Tensión colector-base (Vcb): 80 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Ganancia de corriente contínua (hfe): 5
Paquete / Cubierta: TO31
Búsqueda de reemplazo de transistor bipolar 2SC584
2SC584 Datasheet (PDF)
2sc5843.pdf
DATA SHEETNPN SILICON GERMANIUM RF TRANSISTOR2SC5843NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT
2sc5845.pdf
Transistors2SC5845Silicon NPN epitaxial planar typeFor general amplificationUnit: mm0.40+0.100.050.16+0.100.06 Features3 High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and au-tomatic insertion through the tape packing and the magazine pack-1 2ing(0.95) (0.95)1.90.12.90+0.200.05 Absolu
2sc5840.pdf
Power Transistors2SC5840Silicon NPN epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat)2.60.11.60.2
2sc5846.pdf
TransistorsSSSMini3-F1 Package2SC5846Silicon NPN epitaxial planar typeFor general amplificationUnit: mm0.33+0.05 0.10+0.050.02 0.02 Features3 High forward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of theequipment and automatic insertion through the tape packing0.23+0.05 1 20.02(0.40)(0.40)0.800.051.20
2sc5841.pdf
Power Transistors2SC5841Silicon NPN epitaxial planar typeUnit: mmPower supply for Audio & Visual equipments10.00.2 5.00.11.00.2such as TVs and VCRsIndustrial equipments such as DC-DC converters Features1.20.1C 1.0 High-speed switching (tstg: storage time/tf: fall time is short)1.480.22.250.2 Low collector-emitter saturation voltage VCE(sat)0.
2sc5849.pdf
2SC5849Silicon NPN EpitaxialVHF/UHF wide band amplifierADE-208-1469 (Z)Rev. 0Nov. 2001Features Super compact package: MFPAK (1.4 x 0.8 x 0.59 mm)OutlineMFPAK3121. Emitter2. Base3. CollectorNote: Marking is WY.2SC5849Absolute Maximum Ratings(Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 15 VCollector to emitter voltage
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SB1088 | 2SB1151 | FMMT4124 | FTA1037AK
History: 2SB1088 | 2SB1151 | FMMT4124 | FTA1037AK
Liste
Recientemente añadidas las descripciónes de los transistores:
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