2SC584 - аналоги, параметры транзистора - Справочник транзисторов

2SC584 - технические параметры

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DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR 2SC5843 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz Maximum stable power gain MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz SiGe technology (fT

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Transistors 2SC5845 Silicon NPN epitaxial planar type For general amplification Unit mm 0.40+0.10 0.05 0.16+0.10 0.06 Features 3 High forward current transfer ratio hFE Mini type package, allowing downsizing of the equipment and au- tomatic insertion through the tape packing and the magazine pack- 1 2 ing (0.95) (0.95) 1.9 0.1 2.90+0.20 0.05 Absolu

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Power Transistors 2SC5840 Silicon NPN epitaxial planar type Unit mm 4.6 0.2 Power supply for Audio & Visual equipments 9.9 0.3 2.9 0.2 such as TVs and VCRs Industrial equipments such as DC-DC converters 3.2 0.1 Features High-speed switching (tstg storage time/tf fall time is short) 1.4 0.2 Low collector-emitter saturation voltage VCE(sat) 2.6 0.1 1.6 0.2

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Transistors SSSMini3-F1 Package 2SC5846 Silicon NPN epitaxial planar type For general amplification Unit mm 0.33+0.05 0.10+0.05 0.02 0.02 Features 3 High forward current transfer ratio hFE SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing 0.23+0.05 1 2 0.02 (0.40)(0.40) 0.80 0.05 1.20