2SC597N Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC597N

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.8 W

Tensión colector-base (Vcb): 65 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO39

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2SC597N datasheet

 8.1. Size:178K  toshiba
 2sc5976.pdf pdf_icon

2SC597N

2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications Unit mm DC-DC Converter Applications +0.2 2.8-0.3 Strobe Flash Applications +0.2 1.6-0.1 High DC current gain hFE = 250 to 400 (IC = 0.3 A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) High-speed switching tf = 25 ns (typ.) 3 2 A

 8.2. Size:86K  isahaya
 2sc5974.pdf pdf_icon

2SC597N

SMALL-SIGNAL TRANSISTOR 2SC5974 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit mm ISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application 0.1 FEATURE 0.45 High Emitter to Base voltage VEBO=50V High Reverse hFE Low ON RESISTANCE. RON=1 1.27 1.

 8.3. Size:75K  isahaya
 2sc5974a.pdf pdf_icon

2SC597N

SMALL-SIGNAL TRANSISTOR 2SC5974A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit mm ISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application 0.1 FEATURE 0.45 High Emitter to Base voltage VEBO=40V High Reverse hFE Low ON RESISTANCE. R ON=1 1.2

MOSTRAR MÁS

Otros transistores... 2SC594O, 2SC594R, 2SC594Y, 2SC595, 2SC595N, 2SC596, 2SC596N, 2SC597, BC548, 2SC598, 2SC598N, 2SC599, 2SC599N, 2SC60, 2SC600, 2SC600N, 2SC601