2SC597N Datasheet and Replacement
Type Designator: 2SC597N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO39
2SC597N Substitution
2SC597N Datasheet (PDF)
2sc5976.pdf

2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 Strobe Flash Applications +0.2 1.6-0.1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) High-speed switching: tf = 25 ns (typ.) 32 A
2sc5974.pdf

SMALL-SIGNAL TRANSISTOR2SC5974FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWINGDESCRIPTIONUnit : mmISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application0.1FEATURE0.45 High Emitter to Base voltage VEBO=50VHigh Reverse hFELow ON RESISTANCE. RON=11.27 1.
2sc5974a.pdf

SMALL-SIGNAL TRANSISTOR2SC5974AFOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON NPN EPITAXIAL TYPEOUTLINE DRAWINGDESCRIPTIONUnit:mmISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application 0.1FEATURE0.45 High Emitter to Base voltage VEBO=40VHigh Reverse hFELow ON RESISTANCE. R ON=11.2
Datasheet: 2SC594O , 2SC594R , 2SC594Y , 2SC595 , 2SC595N , 2SC596 , 2SC596N , 2SC597 , 2N3904 , 2SC598 , 2SC598N , 2SC599 , 2SC599N , 2SC60 , 2SC600 , 2SC600N , 2SC601 .
History: 3CK3
Keywords - 2SC597N transistor datasheet
2SC597N cross reference
2SC597N equivalent finder
2SC597N lookup
2SC597N substitution
2SC597N replacement
History: 3CK3



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