2SC597N Specs and Replacement

Type Designator: 2SC597N

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 40 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO39

 2SC597N Substitution

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2SC597N datasheet

 8.1. Size:178K  toshiba

 2sc5976.pdf pdf_icon

2SC597N

2SC5976 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5976 High-Speed Switching Applications Unit mm DC-DC Converter Applications +0.2 2.8-0.3 Strobe Flash Applications +0.2 1.6-0.1 High DC current gain hFE = 250 to 400 (IC = 0.3 A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) High-speed switching tf = 25 ns (typ.) 3 2 A... See More ⇒

 8.2. Size:86K  isahaya

 2sc5974.pdf pdf_icon

2SC597N

SMALL-SIGNAL TRANSISTOR 2SC5974 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit mm ISAHAYA 2SC5974 is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application 0.1 FEATURE 0.45 High Emitter to Base voltage VEBO=50V High Reverse hFE Low ON RESISTANCE. RON=1 1.27 1.... See More ⇒

 8.3. Size:75K  isahaya

 2sc5974a.pdf pdf_icon

2SC597N

SMALL-SIGNAL TRANSISTOR 2SC5974A FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unit mm ISAHAYA 2SC5974A is a mini package resin sealed silicon NPN epitaxial transistor for muting and switching. 4.0 application 0.1 FEATURE 0.45 High Emitter to Base voltage VEBO=40V High Reverse hFE Low ON RESISTANCE. R ON=1 1.2... See More ⇒

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Detailed specifications: 2SC594O, 2SC594R, 2SC594Y, 2SC595, 2SC595N, 2SC596, 2SC596N, 2SC597, BC548, 2SC598, 2SC598N, 2SC599, 2SC599N, 2SC60, 2SC600, 2SC600N, 2SC601

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