2SC602
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SC602
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 20
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.03
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 400
MHz
Capacitancia de salida (Cc): 2.5
pF
Ganancia de corriente contínua (hfe): 60
Paquete / Cubierta:
TO72
Búsqueda de reemplazo de transistor bipolar 2SC602
2SC602
Datasheet (PDF)
0.1. Size:142K toshiba
2sc6026.pdf 
2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120~400 : Complementary to 2SA2154 13Absolute Maximum Ratings (Ta = 25C) 2
0.2. Size:147K toshiba
2sc6026mfv.pdf
2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32
0.3. Size:145K toshiba
2sc6026ct.pdf
2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit: mm0.60.05 High voltage and high current 0.50.03: VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 : Complementary to 2SA2154CT Absolut
0.4. Size:162K toshiba
2sc6026mfv-y 2sc6026mfv-gr.pdf
2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32
0.5. Size:58K sanyo
2sc6023.pdf
Ordering number : ENN8143 2SC6023NPN Epitaxial Planar Silicon TransistorUHF to C Band Low-Noise Amplifier2SC6023and OSC ApplicationsFeatures Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14.5GHz typ (VCE=1V).: fT=22GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=14dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratings at
0.6. Size:54K sanyo
2sc6024.pdf
Ordering number : ENN8290 2SC6024NPN Epitaxial Planar Silicon TransistorUHF to C Band Low-Noise Amplifier2SC6024and OSC ApplicationsFeatures Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14GHz typ (VCE=1V).: fT=21GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless pa
Otros transistores... 2SC598N
, 2SC599
, 2SC599N
, 2SC60
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, 2SC600N
, 2SC601
, 2SC601N
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.
