All Transistors. 2SC602 Datasheet

 

2SC602 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC602
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO72

 2SC602 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC602 Datasheet (PDF)

 0.1. Size:142K  toshiba
 2sc6026.pdf

2SC602 2SC602

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120~400 : Complementary to 2SA2154 13Absolute Maximum Ratings (Ta = 25C) 2

 0.2. Size:147K  toshiba
 2sc6026mfv.pdf

2SC602 2SC602

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32

 0.3. Size:145K  toshiba
 2sc6026ct.pdf

2SC602 2SC602

2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit: mm0.60.05 High voltage and high current 0.50.03: VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 : Complementary to 2SA2154CT Absolut

 0.4. Size:162K  toshiba
 2sc6026mfv-y 2sc6026mfv-gr.pdf

2SC602 2SC602

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32

 0.5. Size:58K  sanyo
 2sc6023.pdf

2SC602 2SC602

Ordering number : ENN8143 2SC6023NPN Epitaxial Planar Silicon TransistorUHF to C Band Low-Noise Amplifier2SC6023and OSC ApplicationsFeatures Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14.5GHz typ (VCE=1V).: fT=22GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=14dB typ (f=2GHz).SpecificationsAbsolute Maximum Ratings at

 0.6. Size:54K  sanyo
 2sc6024.pdf

2SC602 2SC602

Ordering number : ENN8290 2SC6024NPN Epitaxial Planar Silicon TransistorUHF to C Band Low-Noise Amplifier2SC6024and OSC ApplicationsFeatures Low-noise use : NF=1.2dB typ (f=2GHz). High cut-off frequency : fT=14GHz typ (VCE=1V).: fT=21GHz typ (VCE=3V). Low operating voltage. High gain : S21e2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless pa

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