2SC602N Datasheet. Equivalente

 8.1. Size:142K  toshiba
 2sc6026.pdf

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit mm High voltage and high current VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120 400 Complementary to 2SA2154 1 3 Absolute Maximum Ratings (Ta = 25 C) 2

 8.2. Size:147K  toshiba
 2sc6026mfv.pdf

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 to 400 1 Complementary to 2SA2154MFV 3 2

 8.3. Size:145K  toshiba
 2sc6026ct.pdf

2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit mm 0.6 0.05 High voltage and high current 0.5 0.03 VCEO = 50V, IC = 100mA (max) Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 Complementary to 2SA2154CT Absolut

 8.4. Size:162K  toshiba
 2sc6026mfv-y 2sc6026mfv-gr.pdf

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit mm 1.2 0.05 High voltage and high current VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE hFE = 120 to 400 1 Complementary to 2SA2154MFV 3 2

 8.5. Size:58K  sanyo
 2sc6023.pdf

Ordering number ENN8143 2SC6023 NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier 2SC6023 and OSC Applications Features Low-noise use NF=1.2dB typ (f=2GHz). High cut-off frequency fT=14.5GHz typ (VCE=1V). fT=22GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=14dB typ (f=2GHz). Specifications Absolute Maximum Ratings at

 8.6. Size:54K  sanyo
 2sc6024.pdf

Ordering number ENN8290 2SC6024 NPN Epitaxial Planar Silicon Transistor UHF to C Band Low-Noise Amplifier 2SC6024 and OSC Applications Features Low-noise use NF=1.2dB typ (f=2GHz). High cut-off frequency fT=14GHz typ (VCE=1V). fT=21GHz typ (VCE=3V). Low operating voltage. High gain S21e 2=12.5dB typ (f=2GHz). Ultraminiature and thin flat leadless pa