All Transistors. 2SC602N Datasheet

 

2SC602N Datasheet and Replacement


   Type Designator: 2SC602N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 400 MHz
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO72
 

 2SC602N Substitution

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2SC602N Datasheet (PDF)

 8.1. Size:142K  toshiba
2sc6026.pdf pdf_icon

2SC602N

2SC6026 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026 General-Purpose Amplifier Applications Unit: mm High voltage and high current : VCEO = 50 V, IC = 100 mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) High hFE hFE = 120~400 : Complementary to 2SA2154 13Absolute Maximum Ratings (Ta = 25C) 2

 8.2. Size:147K  toshiba
2sc6026mfv.pdf pdf_icon

2SC602N

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32

 8.3. Size:145K  toshiba
2sc6026ct.pdf pdf_icon

2SC602N

2SC6026CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC6026CT General Purpose Amplifier Applications Unit: mm0.60.05 High voltage and high current 0.50.03: VCEO = 50V, IC = 100mA (max) Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)= 0.95 (typ.) High hFE hFE = 120 to 400 : Complementary to 2SA2154CT Absolut

 8.4. Size:162K  toshiba
2sc6026mfv-y 2sc6026mfv-gr.pdf pdf_icon

2SC602N

2SC6026MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6026MFV General-Purpose Amplifier Applications Unit: mm1.2 0.05 High voltage and high current : VCEO = 50 V, IC = 150 mA (max) 0.80 0.05 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 1 High hFE : hFE = 120 to 400 1 Complementary to 2SA2154MFV 32

Datasheet: 2SC599 , 2SC599N , 2SC60 , 2SC600 , 2SC600N , 2SC601 , 2SC601N , 2SC602 , A1941 , 2SC603 , 2SC604 , 2SC605 , 2SC606 , 2SC607 , 2SC608 , 2SC608T , 2SC609 .

History: CMJ10005 | 2SC2547 | BC856BDW1T3G | DTA144WET1G | DTD543XE | 2SB1198KFRA | DTB123TK

Keywords - 2SC602N transistor datasheet

 2SC602N cross reference
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