2SC603 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.24 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltage

2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mmHigh-Speed Swtching Applications +0.2 2.8-0.3 DC-DC Converter Applications +0.2 1.6-0.1 Storobe Flash Applications 1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) 3 2 High-speed switching: tf = 38 ns (typ.

Transistors 2SC6036Silicon NPN epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SA21620.33+0.05 0.10+0.05-0.02 -0.02 Features3 Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing0.23+0.05 1 2-0.02(0.40)(0.40)0.800.05 Ab