2SC603 Datasheet and Replacement
Type Designator: 2SC603
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 7 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: R144
2SC603 Substitution
2SC603 Datasheet (PDF)
2sc6034.pdf

2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Unit: mmSwitching Regulator Applications DC-DC Converter Applications High-speed switching: tf = 0.24 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltage
2sc6033.pdf

2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit : mmHigh-Speed Swtching Applications +0.2 2.8-0.3 DC-DC Converter Applications +0.2 1.6-0.1 Storobe Flash Applications 1 High DC current gain: hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) 3 2 High-speed switching: tf = 38 ns (typ.
2sc6036.pdf

Transistors 2SC6036Silicon NPN epitaxial planar typeFor general amplificationUnit: mmComplementary to 2SA21620.33+0.05 0.10+0.05-0.02 -0.02 Features3 Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing0.23+0.05 1 2-0.02(0.40)(0.40)0.800.05 Ab
Datasheet: 2SC599N , 2SC60 , 2SC600 , 2SC600N , 2SC601 , 2SC601N , 2SC602 , 2SC602N , TIP122 , 2SC604 , 2SC605 , 2SC606 , 2SC607 , 2SC608 , 2SC608T , 2SC609 , 2SC609T .
Keywords - 2SC603 transistor datasheet
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2SC603 equivalent finder
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2SC603 replacement



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