2SC603 Datasheet. Specs and Replacement
Type Designator: 2SC603
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 7 V
Maximum Collector-Emitter Voltage |Vce|: 4 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 5.5 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: R144
2SC603 Substitution
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2SC603 datasheet
2SC6034 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6034 High-Speed, High-Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High-speed switching tf = 0.24 s (max) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltage... See More ⇒
2SC6033 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6033 Unit mm High-Speed Swtching Applications +0.2 2.8-0.3 DC-DC Converter Applications +0.2 1.6-0.1 Storobe Flash Applications 1 High DC current gain hFE = 250 to 400 (IC = 0.3 A) Low collector-emitter saturation VCE (sat) = 0.18 V (max) 3 2 High-speed switching tf = 38 ns (typ.... See More ⇒
Transistors 2SC6036 Silicon NPN epitaxial planar type For general amplification Unit mm Complementary to 2SA2162 0.33+0.05 0.10+0.05 -0.02 -0.02 Features 3 Low collector-emitter saturation voltage VCE(sat) SSS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing 0.23+0.05 1 2 -0.02 (0.40)(0.40) 0.80 0.05 Ab... See More ⇒
Detailed specifications: 2SC599N, 2SC60, 2SC600, 2SC600N, 2SC601, 2SC601N, 2SC602, 2SC602N, BC557, 2SC604, 2SC605, 2SC606, 2SC607, 2SC608, 2SC608T, 2SC609, 2SC609T
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