2SC606 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SC606
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 30 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.02 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 265 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO50-1

Búsqueda de reemplazo de transistor bipolar 2SC606

2SC606 Datasheet (PDF)

0.1. Size:205K toshiba
2sc6061.pdf

2SC6061 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6061 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 +0.2 1.6-0.1 High-DC current gain: hFE = 120 to 300 (IC = 0.1 A) Low-collector-emitter saturation: VCE (sat) = 0.14 V (max) 1 High-speed switching: tf = 0.2 s (typ) 32 Absolute Maximum Ratings (Ta = 25C)

0.2. Size:143K toshiba
2sc6067.pdf

2SC6067 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC6067 Medium Power Amplifier Applications Unit: mm Strobe Flash Applications Low Saturation Voltage: VCE (sat) = 0.3 V (max) (@ IC=3A / IB=60mA Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-Base voltage V 15 VCBO Collector-Emitter voltage V 10 VCEO Emitt

0.3. Size:192K toshiba
2sc6062.pdf

2SC6062 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6062 High-Speed Switching Applications Unit: mmDC-DC Converter Applications +0.2 2.8-0.3 Strobe Applications +0.2 1.6-0.1 High-DC current gain: hFE = 250 to 400 (IC = 0.5 1 A)Low-collector-emitter saturation: VCE (sat) = 0.12 V (max) High-speed switching: tf = 25 ns (typ.) 32 Absolute Maximum Ratings (Ta

0.4. Size:181K toshiba
2sc6060.pdf

2SC6060 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6060 Unit: mmPower Amplifier Applications Driver Stage Amplifier Applications High-transition frequency: fT = 100 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 230 VCollector-emitter voltage VCEO 230 VEmitter-base voltage VEBO 5 VDC IC 1.0 ACollec

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2SA1240

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050