2SC607 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC607

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 75 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 35 MHz

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO5

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2SC607 datasheet

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 2sc6077.pdf pdf_icon

2SC607

2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-ba

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 2sc6075.pdf pdf_icon

2SC607

2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160

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 2sc6076.pdf pdf_icon

2SC607

2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitt

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 2sc6072.pdf pdf_icon

2SC607

MOSTRAR MÁS

Otros transistores... 2SC601, 2SC601N, 2SC602, 2SC602N, 2SC603, 2SC604, 2SC605, 2SC606, A1941, 2SC608, 2SC608T, 2SC609, 2SC609T, 2SC61, 2SC610, 2SC611, 2SC611N