2SC607 Datasheet. Specs and Replacement
Type Designator: 2SC607
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 1 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 35 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO5
2SC607 Substitution
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2SC607 datasheet
2SC6077 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6077 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-ba... See More ⇒
2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) IC = 1A High-speed switching tstg = 0.4 s (typ) www.DataSheet4U.com Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160... See More ⇒
2SC6076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC6076 Power Amplifier Applications Unit mm Power Switching Applications Low collector saturation voltage VCE (sat) = 0.5 V (max) ( IC = 1A) High-speed switching tstg = 0.4 s (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 160 V Collector-emitt... See More ⇒
Detailed specifications: 2SC601, 2SC601N, 2SC602, 2SC602N, 2SC603, 2SC604, 2SC605, 2SC606, A1941, 2SC608, 2SC608T, 2SC609, 2SC609T, 2SC61, 2SC610, 2SC611, 2SC611N
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