2SC612N Todos los transistores

 

2SC612N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SC612N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 12 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.02 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 650 MHz
   Capacitancia de salida (Cc): 2 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO72
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2SC612N Datasheet (PDF)

 8.1. Size:201K  toshiba
 2sc6124.pdf pdf_icon

2SC612N

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO

 8.2. Size:219K  toshiba
 2sc6126.pdf pdf_icon

2SC612N

2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit : mmDC-DC Converter Applications LCD Backlighting Applications High DC current gain: hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation: VCE(sat) = 0.18 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic

 8.3. Size:150K  toshiba
 2sc6125.pdf pdf_icon

2SC612N

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit : mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector

 8.4. Size:132K  toshiba
 2sc6127.pdf pdf_icon

2SC612N

2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit: mmHigh Voltage Amplifier Applications High voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 800 VCollector-emitter voltage VCEO 800 VEmitter-base voltage VEBO 5 VCollector current IC 5

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: PBSS5240X | 2N5034 | MMBTSS8050L | 2SA1136 | 2SD504 | TI490

 

 
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