All Transistors. 2SC612N Datasheet

 

2SC612N Datasheet and Replacement


   Type Designator: 2SC612N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 12 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.02 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 650 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: TO72
 

 2SC612N Substitution

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2SC612N Datasheet (PDF)

 8.1. Size:201K  toshiba
 2sc6124.pdf pdf_icon

2SC612N

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO

 8.2. Size:219K  toshiba
 2sc6126.pdf pdf_icon

2SC612N

2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit : mmDC-DC Converter Applications LCD Backlighting Applications High DC current gain: hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation: VCE(sat) = 0.18 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic

 8.3. Size:150K  toshiba
 2sc6125.pdf pdf_icon

2SC612N

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit : mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector

 8.4. Size:132K  toshiba
 2sc6127.pdf pdf_icon

2SC612N

2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit: mmHigh Voltage Amplifier Applications High voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 800 VCollector-emitter voltage VCEO 800 VEmitter-base voltage VEBO 5 VCollector current IC 5

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Datasheet: 2SC608T , 2SC609 , 2SC609T , 2SC61 , 2SC610 , 2SC611 , 2SC611N , 2SC612 , A940 , 2SC613 , 2SC614 , 2SC615 , 2SC616 , 2SC617 , 2SC618 , 2SC618A , 2SC619 .

History: MJB44H11 | DT63-400 | 2SC2021 | 2SC3087 | CMPT3646 | DTC043TEB | MD1802FX

Keywords - 2SC612N transistor datasheet

 2SC612N cross reference
 2SC612N equivalent finder
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