2SC612N Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

2SC612N Datasheet. Specs and Replacement

Type Designator: 2SC612N

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.02 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 650 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: TO72

2SC612N Substitution

- BJT ⓘ Cross-Reference Search

2SC612N datasheet

8.1. Size:201K toshiba

2sc6124.pdf pdf_icon

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit mm Power Switching Applications Low collector emitter saturation voltage VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector-base voltage VCBO... See More ⇒

8.2. Size:219K toshiba

2sc6126.pdf pdf_icon

2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit mm DC-DC Converter Applications LCD Backlighting Applications High DC current gain hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation VCE(sat) = 0.18 V (max) High-speed switching tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic... See More ⇒

8.3. Size:150K toshiba

2sc6125.pdf pdf_icon

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit mm Power Amplifier Applications High DC current gain hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation VCE (sat) = 0.2 V (max) High-speed switching tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit Collector... See More ⇒

8.4. Size:132K toshiba

2sc6127.pdf pdf_icon

2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit mm High Voltage Amplifier Applications High voltage VCEO = 800 V Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 800 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 5 V Collector current IC 5... See More ⇒