2SC613 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SC613

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.36 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 15 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.2 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 375 MHz

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 20

Encapsulados: TO18

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2SC613 datasheet

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 2sc6134.pdf pdf_icon

2SC613

2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) 3 2 High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (

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 2sc6136.pdf pdf_icon

2SC613

2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tf = 0.18 s (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltag

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 2sc6133.pdf pdf_icon

2SC613

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 1.7 0.1 High DC current gain hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.12 V (max) 3 2 High-speed switching tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Char

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 2sc6132.pdf pdf_icon

2SC613

MOSTRAR MÁS

Otros transistores... 2SC609, 2SC609T, 2SC61, 2SC610, 2SC611, 2SC611N, 2SC612, 2SC612N, 2SC4793, 2SC614, 2SC615, 2SC616, 2SC617, 2SC618, 2SC618A, 2SC619, 2SC62