2SC613 Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

2SC613 Datasheet. Specs and Replacement

Type Designator: 2SC613

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.36 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 375 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO18

2SC613 Substitution

- BJT ⓘ Cross-Reference Search

2SC613 datasheet

0.1. Size:144K toshiba

2sc6134.pdf pdf_icon

2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 Strobe Applications 1.7 0.1 High DC current gain hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.14 V (max) 3 2 High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (... See More ⇒

0.2. Size:191K toshiba

2sc6136.pdf pdf_icon

2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 High Voltage Switching Applications Unit mm Switching Regulator Applications DC-DC Converter Applications High speed switching tf = 0.18 s (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 600 V Collector-emitter voltag... See More ⇒

0.3. Size:140K toshiba

2sc6133.pdf pdf_icon

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit mm DC-DC Converter Applications 2.1 0.1 1.7 0.1 High DC current gain hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage VCE (sat) = 0.12 V (max) 3 2 High-speed switching tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Char... See More ⇒

0.4. Size:230K toshiba

2sc6132.pdf pdf_icon