2SC619 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SC619 Datasheet (PDF)

9.1. 2sc6142.pdf Size:206K _toshiba

2SC6142 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6142 Unit: mm High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications MAX Excellent switching times: tf = 0.15 s (typ.) High collector breakdown voltage: VCES = 800

9.2. 2sc6105.pdf Size:146K _toshiba

2SC6105 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC6105 High Voltage Switching Applications Unit: mm High voltage: VCEO = 600 V (max) Low saturation voltage: VCE (sat) (1) = 1.0 V (max) @IC = 20 mA, IB = 0.5 mA Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltage

 9.3. 2sc6132.pdf Size:230K _toshiba

2SC6132 NPN 2SC6132 : mm : VCE (sat) = 0.15V () (Ta = 25C)

9.4. 2sc6140.pdf Size:173K _toshiba

2SC6140 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6140 Audio Frequency Amplifier Applications : mm High collector voltage : VCEO = 160 V Small collector output capacitance : Cob = 12pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SA2220 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollec

 9.5. 2sc6125.pdf Size:150K _toshiba

2SC6125 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6125 High-Speed Switching Applications Unit : mmPower Amplifier Applications High DC current gain: hFE = 180 to 390 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.2 V (max) High-speed switching: tf = 15 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Collector

9.6. 2sc6100.pdf Size:165K _toshiba

2SC6100 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6100 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.3 A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) 32 High-speed switching: tf = 120 ns (typ.) Absolute Maximum Rati

9.7. 2sc6135.pdf Size:140K _toshiba

2SC6135 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6135 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.11 High DC current gain: hFE = 400 to 1000 (IC = 0.1A) Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) 32 High-speed switching: tf = 85 ns (typ.) Absolute Maximum Rating

9.8. 2sc6126.pdf Size:219K _toshiba

2SC6126 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6126 High-Speed Switching Applications Unit : mmDC-DC Converter Applications LCD Backlighting Applications High DC current gain: hFE = 250 to 400 (IC= 0.3 A) Low collector-emitter saturation: VCE(sat) = 0.18 V (max) High-speed switching: tf = 40 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristic

9.9. 2sc6133.pdf Size:140K _toshiba

2SC6133 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6133 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.11.70.1 High DC current gain: hFE = 400 to 1000 (IC = 0.15A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) 32 High-speed switching: tf = 45 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Char

9.10. 2sc6139.pdf Size:185K _toshiba

2SC6139 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6139 Audio Frequency Amplifier Applications Unit: mm High collector voltage : VCEO = 160 V (min) Small collector output capacitance : Cob = 12pF (typ.) High transition frequency : fT = 100MHz (typ.) Complementary to 2SA2219 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCo

9.11. 2sc6134.pdf Size:144K _toshiba

2CS6134 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6134 High-Speed Switching Applications Unit: mmDC-DC Converter Applications 2.10.1Strobe Applications 1.70.1 High DC current gain: hFE = 250 to 400 (IC = 0.3A) 1 Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) 32 High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (

9.12. 2sc6124.pdf Size:201K _toshiba

2SC6124 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6124 Power Amplifier Applications Unit: mmPower Switching Applications Low collector emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching: tstg = 400 ns (typ.) Complementary to 2SA2206 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO

9.13. 2sc6127.pdf Size:132K _toshiba

2SC6127 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6127 High Voltage Switching Applications Unit: mmHigh Voltage Amplifier Applications High voltage: VCEO = 800 V Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 800 VCollector-emitter voltage VCEO 800 VEmitter-base voltage VEBO 5 VCollector current IC 5

9.14. 2sc6136.pdf Size:191K _toshiba

2SC6136 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6136 High Voltage Switching Applications Unit: mm Switching Regulator Applications DC-DC Converter Applications High speed switching: tf = 0.18 s (typ.) (IC = 0.3 A) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 600 VCollector-emitter voltag

9.15. 2sc6144.pdf Size:68K _sanyo

Ordering number : ENA1149 2SC6144SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6144High-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor drivers.Features Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.SpecificationsAbsolute Maxi

9.16. 2sc6118ls.pdf Size:46K _sanyo

Ordering number : ENA0578 2SC6118LSSANYO SemiconductorsDATA SHEETNPN Triple Diffused Planar Silicon TransistorColor TV Horizontal Deflection2SC6118LSOutput ApplicationsFeatures High speed. High breakdown voltage (VCBO=1500V). High reliability (Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.SpecificationsAbsolute Maximum Rating

9.17. 2sc6144sg.pdf Size:292K _sanyo

2SC6144SGOrdering number : ENA1800SANYO SemiconductorsDATA SHEETNPN Epitaxial Planar Silicon Transistor2SC6144SGHigh-Current Switching ApplicationsApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switchi

9.18. 2sc6123-z.pdf Size:306K _renesas

2SC6123 R07DS0329JJ0100Rev.1.00 2011.04.15 2SC6123 VCE(sat) hFE NPN OAFA DC/DC hFE

9.19. 2sc6123.pdf Size:306K _renesas

2SC6123 R07DS0329JJ0100Rev.1.00 2011.04.15 2SC6123 VCE(sat) hFE NPN OAFA DC/DC hFE

9.20. 2sc6114.pdf Size:77K _rohm

2SC6114 Transistors Small signal low frequency amplifier (50V, 100mA) 2SC6114 Applications VMN3Small signal low frequency amplifier Features 0.220.16(3)1) Low Cob. Cob=2.0pF (Typ.) 2) Complements the 2SA2199. (1) (2) Structure 0.370.170.35NPN silicon epitaxial 0.6planar transistor (1) Base(2) EmitterAbbreviated symbol : N(3) Collector Dimensio

9.21. 2sc6144sg.pdf Size:239K _onsemi

Ordering number : ENA1800B2SC6144SGBipolar Transistorhttp://onsemi.com( )50V, 10A, Low VCE sat NPN TO-220F-3FSApplications Relay drivers, lamp drivers, motor driversFeatures Adoption of MBIT process Large current capacitance (IC=10A) Low collector-to-emitter saturation voltage (VCE(sat)=180mV(typ.)) High-speed switching (tf=25ns(typ.))SpecificationsAb

9.22. 2sc6120.pdf Size:138K _isahaya

2SC6120FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATIONSILICON NPN EPITAXIAL TYPEDESCRIPTION UnitmmOUTLINE DRAWING 2SC6120 is a silicon NPN epitaxial type transistor designed with 2.1 high collector current, low VCEsat. 0.425 1.25 0.425FEATURE High collector current ICMAX=600mA Low collector to emitter saturation voltage VCE

9.23. 2sc6145a.pdf Size:226K _sanken-ele

2SC6145AAudio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound ou

9.24. 2sc6145.pdf Size:227K _sanken-ele

2SC6145Audio Amplification TransistorFeatures and Benefits Description LAPT (High frequency multi emitter transistor) Sanken LAPT transistors have an innovative design, produced Small package (TO-3P) by adapting advancements in the unique Sanken thin-wafer High power handling capacity, 160 W production technology. These NPN power transistors achieve Improved sound out

9.25. 2sc6114t1gp.pdf Size:75K _chenmko

CHENMKO ENTERPRISE CO.,LTD2SC6114T1GPSURFACE MOUNTTransistorVOLTAGE 50 Volts CURRENT 0.1 AmpereAPPLICATION* Small signal low frequency amplifier.FEATURE* Surface mount package. (SOT-923)SOT-923* Low cob. Cob=0.2pF(Typ.)* PC= 150mW0.18~0.26 0.08~0.14CONSTRUCTION(3)* NPN Silicon Transistor(1) (2)0.11~0.190.36~0.410.35(typ)C (3) 0.565~0.635CIRCUITSOT-923

9.26. 2sc6114g5gp.pdf Size:352K _chenmko

CHENMKO ENTERPRISE CO.,LTD2SC6114G5GPSURFACE MOUNTTransistorVOLTAGE 50 Volts CURRENT 0.1 AmpereAPPLICATION* Small signal low frequency amplifier.FEATURE* Surface mount package. (FBPT-1023) * Low cob. Cob=0.2pF(Typ.)* PC= 150mW CONSTRUCTION* NPN Silicon Transistor C (3)

9.27. 2sc6144.pdf Size:210K _inchange_semiconductor

isc Silicon NPN Power Transistors 2SC6144DESCRIPTIONCollector-Emitter Saturation Voltage-: V = 0.36V(Max.)@I = 6ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

9.28. 2sc6145.pdf Size:192K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC6145DESCRIPTIONHigh frequency multi emitter transistorSmall package(TO-3P)High power handling capacity ,160WComplement to Type 2SA2223Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSSignal transistors for audio amplifiersAudio marketABSOLUTE MAXIMUM RATIN

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