2SD1024 Todos los transistores

 ..1. Size:301K  shindengen
 2sd1024.pdf

SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case TO-220 (T8L10) 8A NPN RATINGS Unit mm

 ..2. Size:211K  inchange semiconductor
 2sd1024.pdf

isc Silicon NPN Darlington Power Transistor 2SD1024 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 8.1. Size:132K  nec
 2sd1020.pdf

 8.2. Size:31K  jmnic
 2sd1026.pdf

Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features B C E With TO-247 package Darlington transistor Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power di

 8.3. Size:81K  jmnic
 2sd1023.pdf

Product Specification www.jmnic.com Silicon Power Transistors 2SD1023 DESCRIPTION DARLINGTON High DC current gain With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage O

 8.4. Size:80K  jmnic
 2sd1025.pdf

Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION DARLINGTON With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO

 8.5. Size:100K  inchange semiconductor
 2sd1026.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION High DC Current Gain hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC

 8.6. Size:211K  inchange semiconductor
 2sd1023.pdf

isc Silicon NPN Darlington Power Transistor 2SD1023 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 3A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 8.7. Size:212K  inchange semiconductor
 2sd1025.pdf

isc Silicon NPN Darlington Power Transistor 2SD1025 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 8.8. Size:212K  inchange semiconductor
 2sd1022.pdf

isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 3A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T

 8.9. Size:134K  inchange semiconductor
 2sd1027.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION High DC Current Gain hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- VCEO(SUS) = 200V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC