2SD1030 Todos los transistores

 ..1. Size:37K  panasonic
 2sd1030.pdf

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 a

 ..2. Size:37K  panasonic
 2sd1030 e.pdf

Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 a

 ..3. Size:567K  kexin
 2sd1030.pdf

SMD Type Transistors NPN Transistors 2SD1030 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=50mA 1 2 Collector Emitter Voltage VCEO=40V +0.1 +0.05 0.95-0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect

 8.1. Size:201K  nec
 2sd1033.pdf

 8.2. Size:1032K  kexin
 2sd1033.pdf

SMD Type Transistors NPN Transistors 2SD1033 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High voltageVCEO=150V. Complimentary to 2SB768 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Vo

 8.3. Size:213K  inchange semiconductor
 2sd1037.pdf

isc Silicon NPN Power Transistor 2SD1037 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt

 8.4. Size:187K  inchange semiconductor
 2sd1031.pdf

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1031 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 4A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier app

 8.5. Size:211K  inchange semiconductor
 2sd103.pdf

isc Silicon NPN Power Transistors 2SD103 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High Power Dissipation- P = 25W(Max)@T =25 C C Complement to Type 2SB503 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier, power switching, DC-DC converter and regulator appl

 8.6. Size:217K  inchange semiconductor
 2sd1032.pdf

isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Large Collector Power Dissipation Complement to Type 2SB812 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.7. Size:198K  inchange semiconductor
 2sd1038.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1038 DESCRIPTION High Current Capability Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME