Биполярный транзистор 2SD1030 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1030
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 15 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 125 °C
Статический коэффициент передачи тока (hfe): 400
Корпус транзистора: TO236
2SD1030 Datasheet (PDF)
2sd1030.pdf
Transistor2SD1030Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1High emitter to base voltage VEBO.3Low noise voltage NV.Mini type package, allowing downsizing of the equipment and2a
2sd1030 e.pdf
Transistor2SD1030Silicon NPN epitaxial planer typeFor low-frequency amplificationUnit: mm+0.22.8 0.3+0.250.65 0.15 1.5 0.05 0.65 0.15FeaturesHigh foward current transfer ratio hFE.Low collector to emitter saturation voltage VCE(sat).1High emitter to base voltage VEBO.3Low noise voltage NV.Mini type package, allowing downsizing of the equipment and2a
2sd1030.pdf
SMD Type TransistorsNPN Transistors2SD1030SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=50mA1 2 Collector Emitter Voltage VCEO=40V+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect
2sd1033.pdf
SMD Type TransistorsNPN Transistors2SD1033TO-252Unit: mm+0.156.50-0.15+0.1 Features 2.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 High voltageVCEO=150V. Complimentary to 2SB7680.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vo
2sd1037.pdf
isc Silicon NPN Power Transistor 2SD1037DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 150V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Volt
2sd1031.pdf
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD1031DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 4ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier app
2sd103.pdf
isc Silicon NPN Power Transistors 2SD103DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOHigh Power Dissipation-: P = 25W(Max)@T =25C CComplement to Type 2SB503Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio power amplifier, power switching, DC-DCconverter and regulator appl
2sd1032.pdf
isc Silicon NPN Power Transistor 2SD1032DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOLarge Collector Power DissipationComplement to Type 2SB812Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
2sd1038.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD1038DESCRIPTIONHigh Current CapabilityFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and linear applications in militaryand industrial equipment.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
