2SD1041 Todos los transistores

 

2SD1041 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1041

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 180 W

Tensión colector-base (Vcb): 150 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 100 V

Corriente del colector DC máxima (Ic): 30 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 1 MHz

Ganancia de corriente contínua (hfe): 35

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar 2SD1041

 

2SD1041 Datasheet (PDF)

4.1. 2sd1047e.pdf Size:125K _update_bjt

2SD1041
2SD1041

Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions · Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] · Wide ASO because of on-chip ballast re

4.2. 2sb817c 2sd1047c.pdf Size:445K _update_bjt

2SD1041
2SD1041

Ordering number : ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions • Large current capacitance. unit : mm • Wide ASO and high durability against breakdown. 2022A • Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0

 4.3. 2sd1047 2sd1047e.pdf Size:125K _sanyo

2SD1041
2SD1041

Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions · Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] · Wide ASO because of on-chip ballast re

4.4. 2sd1048.pdf Size:21K _sanyo

2SD1041
2SD1041

Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions • Ultrasmall package allows miniaturization unit : mm in end products. 2018B • Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9

 4.5. 2sb815 2sd1048.pdf Size:239K _sanyo

2SD1041
2SD1041

Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions • Ultrasmall package allows miniaturization unit : mm in end products. 2018B • Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9

4.6. 2sd1046.pdf Size:115K _sanyo

2SD1041
2SD1041

Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features Package Dimensions · Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB816/2SD1046] · Wide ASO because of built-in ballast resistance

4.7. 2sb817p 2sd1047p 2sd1047p.pdf Size:30K _sanyo

2SD1041
2SD1041

Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions • Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P

4.8. 2sd1049.pdf Size:102K _fuji

2SD1041
2SD1041

 Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.9. 2sd1049.pdf Size:115K _jmnic

2SD1041
2SD1041

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1049 · DESCRIPTION ·With TO-3PN package ·High current, ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emi

4.10. 2sb817c 2sd1047c.pdf Size:445K _sanken-ele

2SD1041
2SD1041

Ordering number : ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions • Large current capacitance. unit : mm • Wide ASO and high durability against breakdown. 2022A • Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0

4.11. 2sd1049.pdf Size:213K _inchange_semiconductor

2SD1041
2SD1041

isc Silicon NPN Power Transistor 2SD1049 DESCRIPTION ·High Current Capability ·Fast Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifiers Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

4.12. 2sd1044.pdf Size:219K _inchange_semiconductor

2SD1041
2SD1041

isc Silicon NPN Darlington Power Transistor 2SD1044 DESCRIPTION ·High DC Current Gain : h = 700(Min.)@ I = 1A, V = 4V FE C CE ·High Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR) CEO ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MA

4.13. 2sd1047e.pdf Size:206K _inchange_semiconductor

2SD1041
2SD1041

isc Product Specification isc Silicon NPN Power Transistor 2SD1047E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 140V(Min) (BR)CEO ·Good Linearity of h FE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817E ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency a

4.14. 2sd1046.pdf Size:221K _inchange_semiconductor

2SD1041
2SD1041

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1046 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 120V(Min) (BR)CEO ·Good Linearity of h FE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB816 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For LF power amplifier, 50W output

4.15. 2sd1047.pdf Size:218K _inchange_semiconductor

2SD1041
2SD1041

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 140V(Min) (BR)CEO ·Good Linearity of h FE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Recommend for 60W audio frequency amplifier output stage a

4.16. 2sd1040.pdf Size:196K _inchange_semiconductor

2SD1041
2SD1041

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1040 DESCRIPTION ·High Current Capability ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators in industrial and commercial application

4.17. 2sd1048.pdf Size:705K _kexin

2SD1041
2SD1041

SMD Type Transistors NPN Transistors 2SD1048 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Large current capacity (IC=0.7A) and low-saturation voltage. ● Complimentary to 2SB815 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VC

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top

 


2SD1041
  2SD1041
  2SD1041
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: YZ21 | WT062 | TL142 | TIP3055T | TIP2955T | MN638S | MJE340T | MJE3055AT | MJ10012T | KTD1945 | KTC2202 | KTC2200 | KSD880W | BUX47AFI | BUX18A | BUW12W | BUW12AW | BUW11W | BUW11AW | BUV48BFI |

 

 

 
Back to Top