All Transistors. 2SD1041 Datasheet

 

2SD1041 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SD1041

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 180 W

Maximum Collector-Base Voltage |Vcb|: 150 V

Maximum Collector-Emitter Voltage |Vce|: 120 V

Maximum Emitter-Base Voltage |Veb|: 100 V

Maximum Collector Current |Ic max|: 30 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 1 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO3

2SD1041 Transistor Equivalent Substitute - Cross-Reference Search

 

2SD1041 Datasheet (PDF)

4.1. 2sd1047e.pdf Size:125K _update_bjt

2SD1041
2SD1041

Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions · Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] · Wide ASO because of on-chip ballast re

4.2. 2sb817c 2sd1047c.pdf Size:445K _update_bjt

2SD1041
2SD1041

Ordering number : ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions • Large current capacitance. unit : mm • Wide ASO and high durability against breakdown. 2022A • Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0

 4.3. 2sd1048.pdf Size:21K _sanyo

2SD1041
2SD1041

Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit : mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Ba

4.4. 2sd1047p.pdf Size:30K _sanyo

2SD1041
2SD1041

Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2S

 4.5. 2sb817p 2sd1047p.pdf Size:30K _sanyo

2SD1041
2SD1041

Ordering number : ENN6572 2SB817P / 2SD1047P 2SB817P : PNP Epitaxial Planar Silicon Transistor 2SD1047P : NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit : mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P / 2S

4.6. 2sb815 2sd1048.pdf Size:239K _sanyo

2SD1041
2SD1041

Ordering number : ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit : mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 : Ba

4.7. 2sd1046.pdf Size:115K _sanyo

2SD1041
2SD1041

Ordering number:677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features Package Dimensions Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB816/2SD1046] Wide ASO because of built-in ballast resistance.

4.8. 2sd1047.pdf Size:125K _sanyo

2SD1041
2SD1041

Ordering number:680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit:mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] Wide ASO because of on-chip ballast resista

4.9. 2sd1049.pdf Size:102K _fuji

2SD1041
2SD1041

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

4.10. 2sd1049.pdf Size:115K _jmnic

2SD1041
2SD1041

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1049 · DESCRIPTION ·With TO-3PN package ·High current, ·High speed switching ·High reliability APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitte

4.11. 2sd1049.pdf Size:213K _inchange_semiconductor

2SD1041
2SD1041

isc Silicon NPN Power Transistor 2SD1049 DESCRIPTION ·High Current Capability ·Fast Switching Speed ·High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Motor controls ·High frequency inverters ·General purpose power amplifiers Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

4.12. 2sd1044.pdf Size:219K _inchange_semiconductor

2SD1041
2SD1041

isc Silicon NPN Darlington Power Transistor 2SD1044 DESCRIPTION ·High DC Current Gain : h = 700(Min.)@ I = 1A, V = 4V FE C CE ·High Collector-Emitter Breakdown Voltage- : V = 80V(Min) (BR) CEO ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplifier applications. ABSOLUTE MA

4.13. 2sd1047e.pdf Size:206K _inchange_semiconductor

2SD1041
2SD1041

isc Product Specification isc Silicon NPN Power Transistor 2SD1047E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 140V(Min) (BR)CEO ·Good Linearity of h FE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817E ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency a

4.14. 2sd1046.pdf Size:221K _inchange_semiconductor

2SD1041
2SD1041

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1046 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 120V(Min) (BR)CEO ·Good Linearity of h FE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB816 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For LF power amplifier, 50W output

4.15. 2sd1047.pdf Size:218K _inchange_semiconductor

2SD1041
2SD1041

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 140V(Min) (BR)CEO ·Good Linearity of h FE ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB817 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Recommend for 60W audio frequency amplifier output stage a

4.16. 2sd1040.pdf Size:196K _inchange_semiconductor

2SD1041
2SD1041

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1040 DESCRIPTION ·High Current Capability ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators in industrial and commercial application

4.17. 2sd1048.pdf Size:705K _kexin

2SD1041
2SD1041

SMD Type Transistors NPN Transistors 2SD1048 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Large current capacity (IC=0.7A) and low-saturation voltage. ● Complimentary to 2SB815 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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