2SD105 Todos los transistores

 

2SD105 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD105
   Material: Ge
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.4 A
   Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 35
   Paquete / Cubierta: TO1
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2SD105 Datasheet (PDF)

 0.2. Size:113K  toshiba
2sd1052a.pdf pdf_icon

2SD105

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 0.3. Size:124K  rohm
2sd1055 2sd1766.pdf pdf_icon

2SD105

TransistorsMedium Power Transistor (32V, 2A)2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /2SD1919 / 2SD1227MFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC / IB = 2A / 0.2A)2) Complements the2SB1188 / 2SB1182 / 2SB1240 /2SB891F / 2SB822 / 2SB1277 /2SB911MFStructureEpitaxial planar typeNPN silicon transistor(96-217-B24)2562SD1766 /

 0.4. Size:44K  panasonic
2sd1051 e.pdf pdf_icon

2SD105

Transistor2SD1051Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SB8196.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KMBTA05 | 2SC706 | DTA602 | 2SC1400U | ECG311

 

 
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