2SD105 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SD105 Specs and Replacement

Type Designator: 2SD105

Material of Transistor: Ge

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.4 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO1

2SD105 Substitution

- BJT ⓘ Cross-Reference Search

2SD105 datasheet

0.1. Size:505K 1

2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf pdf_icon

... See More ⇒

0.2. Size:113K toshiba

2sd1052a.pdf pdf_icon

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒

0.3. Size:124K rohm

2sd1055 2sd1766.pdf pdf_icon

Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 / ... See More ⇒

0.4. Size:44K panasonic

2sd1051 e.pdf pdf_icon

Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5... See More ⇒