2SD1051 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1051 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 typ MHz
Capacitancia de salida (Cc): 45 pF
Ganancia de corriente contínua (hFE): 80
Encapsulados: SC71
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2SD1051 datasheet
2sd1051 e.pdf
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5
2sd1051.pdf
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5
2sd1052a.pdf
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Otros transistores... 2SD1047O, 2SD1048, 2SD1048-6, 2SD1048-7, 2SD1048-8, 2SD1049, 2SD105, 2SD1050, BC548, 2SD1052, 2SD1052A, 2SD1053, 2SD1054, 2SD1055, 2SD1056, 2SD1059, 2SD1060
Parámetros del transistor bipolar y su interrelación.
History: ZT110 | RN2901AFS | UN5217R | 2SA509G | RN4904FE | RN4608 | RN2711JE
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