2SD1055 Todos los transistores

 

2SD1055 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SD1055
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 40 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SPECIAL
 

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2SD1055 Datasheet (PDF)

 ..1. Size:505K  1
 2sd1766 2sd1758 2sd1862 2sd1189f 2sd1055 2sd1919 2sd1227m.pdf pdf_icon

2SD1055

 ..2. Size:124K  rohm
 2sd1055 2sd1766.pdf pdf_icon

2SD1055

TransistorsMedium Power Transistor (32V, 2A)2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 /2SD1919 / 2SD1227MFFeatures FExternal dimensions (Units: mm)1) Low VCE(sat).VCE(sat) = 0.5V (Typ.)(IC / IB = 2A / 0.2A)2) Complements the2SB1188 / 2SB1182 / 2SB1240 /2SB891F / 2SB822 / 2SB1277 /2SB911MFStructureEpitaxial planar typeNPN silicon transistor(96-217-B24)2562SD1766 /

 8.1. Size:113K  toshiba
 2sd1052a.pdf pdf_icon

2SD1055

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

 8.2. Size:44K  panasonic
 2sd1051 e.pdf pdf_icon

2SD1055

Transistor2SD1051Silicon NPN epitaxial planer typeFor low-frequency power amplificationUnit: mmComplementary to 2SB8196.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesHigh collector to emitter voltage VCEO.Large collector power dissipation PC.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.5

MOSTRAR MÁS

Otros transistores... 2SD1049 , 2SD105 , 2SD1050 , 2SD1051 , 2SD1052 , 2SD1052A , 2SD1053 , 2SD1054 , BC337 , 2SD1056 , 2SD1059 , 2SD1060 , 2SD1060Q , 2SD1060R , 2SD1060S , 2SD1061 , 2SD1061Q .

 

 
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