2SD1055 Specs and Replacement
Type Designator: 2SD1055
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: SPECIAL
2SD1055 Substitution
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2SD1055 datasheet
Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 / ... See More ⇒
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5... See More ⇒
Detailed specifications: 2SD1049 , 2SD105 , 2SD1050 , 2SD1051 , 2SD1052 , 2SD1052A , 2SD1053 , 2SD1054 , 2SA1943 , 2SD1056 , 2SD1059 , 2SD1060 , 2SD1060Q , 2SD1060R , 2SD1060S , 2SD1061 , 2SD1061Q .
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