2SD1062Q Todos los transistores

 

2SD1062Q Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1062Q

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 70

Encapsulados: TO220

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2SD1062Q datasheet

 7.1. Size:104K  sanyo
2sd1062.pdf pdf_icon

2SD1062Q

 7.2. Size:55K  jmnic
2sd1062.pdf pdf_icon

2SD1062Q

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1062 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to

 7.3. Size:219K  inchange semiconductor
2sd1062.pdf pdf_icon

2SD1062Q

isc Silicon NPN Power Transistors 2SD1062 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I =6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general high-current switching app

Otros transistores... 2SD1060Q , 2SD1060R , 2SD1060S , 2SD1061 , 2SD1061Q , 2SD1061R , 2SD1061S , 2SD1062 , TIP31C , 2SD1062R , 2SD1062S , 2SD1063 , 2SD1063Q , 2SD1063R , 2SD1063S , 2SD1064 , 2SD1064Q .

History: 2SD1061S | C5T5400

 

 

 


History: 2SD1061S | C5T5400

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