2SD1062R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1062R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: TO220
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2SD1062R Datasheet (PDF)
2sd1062.pdf

Ordering number:723HPNP/NPN Epitaxial Planar Silicon Transistors2SB826/2SD106250V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2010C[2SB826/2SD1062]Features Low-saturation collector-to-emitter voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) max.
2sd1062.pdf

Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1062 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to
2sd1062.pdf

isc Silicon NPN Power Transistors 2SD1062DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I =6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB826Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general high-current switching app
Otros transistores... 2SD1060R , 2SD1060S , 2SD1061 , 2SD1061Q , 2SD1061R , 2SD1061S , 2SD1062 , 2SD1062Q , 2SD1047 , 2SD1062S , 2SD1063 , 2SD1063Q , 2SD1063R , 2SD1063S , 2SD1064 , 2SD1064Q , 2SD1064R .
History: PTB20038 | 2SB160 | 2SA1368
History: PTB20038 | 2SB160 | 2SA1368



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