2SD1062R Todos los transistores

 

2SD1062R Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1062R

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO220

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2SD1062R datasheet

 7.1. Size:104K  sanyo
 2sd1062.pdf pdf_icon

2SD1062R

 7.2. Size:55K  jmnic
 2sd1062.pdf pdf_icon

2SD1062R

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1062 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to

 7.3. Size:219K  inchange semiconductor
 2sd1062.pdf pdf_icon

2SD1062R

isc Silicon NPN Power Transistors 2SD1062 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I =6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general high-current switching app

MOSTRAR MÁS

Otros transistores... 2SD1060R , 2SD1060S , 2SD1061 , 2SD1061Q , 2SD1061R , 2SD1061S , 2SD1062 , 2SD1062Q , 2N2222A , 2SD1062S , 2SD1063 , 2SD1063Q , 2SD1063R , 2SD1063S , 2SD1064 , 2SD1064Q , 2SD1064R .

History: 2SD1060Q | 2SD1063Q | 2SD1064 | 2SD1061 | 2SD1060R

 

 

 

 

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