2SD1062R pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

2SD1062R Specs and Replacement

Type Designator: 2SD1062R

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 40 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: TO220

2SD1062R Substitution

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2SD1062R datasheet

7.1. Size:104K sanyo

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7.2. Size:55K jmnic

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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1062 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to... See More ⇒

7.3. Size:219K inchange semiconductor

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isc Silicon NPN Power Transistors 2SD1062 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I =6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general high-current switching app... See More ⇒

Detailed specifications: 2SD1060R, 2SD1060S, 2SD1061, 2SD1061Q, 2SD1061R, 2SD1061S, 2SD1062, 2SD1062Q, 2N2222A, 2SD1062S, 2SD1063, 2SD1063Q, 2SD1063R, 2SD1063S, 2SD1064, 2SD1064Q, 2SD1064R