2SD1062R Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD1062R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
2SD1062R Transistor Equivalent Substitute - Cross-Reference Search
2SD1062R Datasheet (PDF)
2sd1062.pdf
Ordering number:723HPNP/NPN Epitaxial Planar Silicon Transistors2SB826/2SD106250V/12A Switching ApplicationsApplications Package Dimensions Relay drivers, high-speed inverters, converters, andunit:mmother general high-current switching applications.2010C[2SB826/2SD1062]Features Low-saturation collector-to-emitter voltage :VCE(sat)=0.5V (PNP), 0.4V (NPN) max.
2sd1062.pdf
Product Specification www.jmnic.comSilicon NPN Power Transistors 2SD1062 DESCRIPTION With TO-220 package Low collector saturation voltage Complement to type 2SB826 Wide area of safe operation APPLICATIONS Relay drivers, High-speed inverters, Converters General high-current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to
2sd1062.pdf
isc Silicon NPN Power Transistors 2SD1062DESCRIPTIONLow Collector Saturation Voltage: V = 0.4V(Max)@ I =6ACE(sat) CWide Area of Safe OperationComplement to Type 2SB826Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for relay drivers, high-speed inverters, converters,and other general high-current switching app
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
