2SD1085K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1085K  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 500

Encapsulados: TO220

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2SD1085K datasheet

 8.1. Size:111K  mospec
 2sd1088.pdf pdf_icon

2SD1085K

A A A

 8.2. Size:56K  no
 2sd1083.pdf pdf_icon

2SD1085K

 8.3. Size:180K  inchange semiconductor
 2sd108.pdf pdf_icon

2SD1085K

INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD108 DESCRIPTION High DC current gain- h = 2000 (Min) @ I = 1A FE C Collector-Emitter Sustaining Voltage- V =80V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Hammer drivers Series and shunt regulator Audio amplifi

 8.4. Size:212K  inchange semiconductor
 2sd1088.pdf pdf_icon

2SD1085K

isc Silicon NPN Darlington Power Transistor 2SD1088 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) High DC Current Gain- h = 2000(Min.)@I = 2A FE C Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in hig

MOSTRAR MÁS

Otros transistores... 2SD1081L, 2SD1081S, 2SD1082, 2SD1083, 2SD1083L, 2SD1083S, 2SD1084, 2SD1085, 2SD669A, 2SD1087, 2SD1088, 2SD1089, 2SD1090, 2SD1091, 2SD1092, 2SD1093, 2SD1094