2SD1088 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1088 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 30 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 250 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 35 pF
Ganancia de corriente contínua (hFE): 6000
Encapsulados: TO220
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2SD1088 datasheet
2sd1088.pdf
isc Silicon NPN Darlington Power Transistor 2SD1088 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) High DC Current Gain- h = 2000(Min.)@I = 2A FE C Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 4A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in hig
2sd108.pdf
INCHANGE Semiconductor isc Silicon NPN Darlingtion Power Transistor 2SD108 DESCRIPTION High DC current gain- h = 2000 (Min) @ I = 1A FE C Collector-Emitter Sustaining Voltage- V =80V(Min) CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Hammer drivers Series and shunt regulator Audio amplifi
2sd1047.pdf
2SD1047 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage VCEO = 140 V Typical ft = 20 MHz Fully characterized at 125 oC Application Power supply 3 2 1 Description TO-3P The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain line
2sd1069.pdf
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2sd1052a.pdf
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2sd1060.pdf
Ordering number EN686J 2SB824 / 2SD1060 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SB824 / 2SD1060 50V / 5A Switching Applications Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching. Features Low collector-to-emitter saturation voltage VCE(sat)= (--)0.4V max / IC= (--)3A,
2sb815 2sd1048.pdf
Ordering number ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9
2sb817p 2sd1047p 2sd1047p.pdf
Ordering number ENN6572 2SB817P / 2SD1047P 2SB817P PNP Epitaxial Planar Silicon Transistor 2SD1047P NPN Triple Diffused Planar Silicon Transistor 2SB817P / 2SD1047P 140V / 12A, AF80W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817P
2sd1048.pdf
Ordering number ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9
2sd1061.pdf
Ordering number 687G PNP/NPN Epitaxial Planar Silicon Transistors 2SB825/2SD1061 50V/7A Switching Applications Applications Package Dimensions Universal high current switching as solenoid driving, unit mm high speed inverter and converter. 2010C [2SB825/2SD1061] Features Low saturation voltage VCE(sat)=( )0.4V max. Wide ASO JEDEC TO-220AB 1 Base ( ) 2SB825 EI
2sd1047 2sd1047e.pdf
Ordering number 680F PNP Epitaxial Planar Silicon Transistors NPN Triple Diffused Planar Silicon Transistors 2SB817/2SD1047 140V/12A AF 60W Output Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB817/2SD1047] Wide ASO because of on-chip ballast re
2sb827 2sd1063.pdf
Ordering number 688H PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB827/2SD1063 50V/7A Switching Applicationsa Applications Package Dimensions Universal high current switching as solenoid driving, unit mm high speed inverter and converter. 2022A [2SB827/2SD1063] Features Low collector-to-emitter saturation voltage VCE(sat)=( )0.4V max. Wide ASO. 1 Base 2 Co
2sd1046.pdf
Ordering number 677D PNP/NPN Epitaxial Planar Silicon Transistors 2SB816/2SD1046 For LF Power Amplifier, 50W Output Large Power Switching Applications Features Package Dimensions Capable of being mounted easily because of one- unit mm point fixing type plastic molded package (Inter- 2022A changeable with TO-3). [2SB816/2SD1046] Wide ASO because of built-in ballast resistance
2sd1065.pdf
Ordering number 825C PNP/NPN Epitaxial Planar Silicon Tranasistors 2SB829/2SD1065 50V/15A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit mm other general high-current switching applications. 2022A [2SD829/2SD1065] Features Low-saturation collector-to-emitter voltage VCE(sat) = 0.5V max. Wide ASO lead
2sd1012.pdf
Ordering number ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit mm 2033A [2SB808/2SD1012] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter 2 Collector ( ) 2SB808 3 Base 3.0 3.8 SANYO SPA Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions R
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Transistors Medium Power Transistor (32V, 2A) 2SD1766 / 2SD1758 / 2SD1862 / 2SD1055 / 2SD1919 / 2SD1227M FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor (96-217-B24) 256 2SD1766 /
2sd1060.pdf
Ordering number EN686K 2SD1060 Bipolar Transistor http //onsemi.com ( ) 50V, 5A, Low VCE sat NPN TO-220-3L Applications Suitable for relay drivers, high-speed inverters, converters, and other general large-current switching Features Low collector-to-emitter saturation voltage VCE(sat)=0.3V max / IC=3A, IB= 0.3A Specifications Absolute Maximum Ratings at Ta=25 C Paramete
2sb815 2sd1048.pdf
Ordering number EN694H 2SB815/2SD1048 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 15V, 0.7A, Low VCE sat , PNP NPN Single CP Features Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage ( ) 2SB815 Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Col
2sd1051 e.pdf
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5
2sd1011 e.pdf
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 1
2sd1011.pdf
Transistor 2SD1011 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 1
2sd1051.pdf
Transistor 2SD1051 Silicon NPN epitaxial planer type For low-frequency power amplification Unit mm Complementary to 2SB819 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High collector to emitter voltage VCEO. Large collector power dissipation PC. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.5
2sd1010 e.pdf
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.2
2sd1030.pdf
Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 a
2sd1010.pdf
Transistor 2SD1010 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm 5.0 0.2 4.0 0.2 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 0.45 0.1 0.45 0.1 Parameter Symbol Ratings Unit 1.27 1.2
2sd1030 e.pdf
Transistor 2SD1030 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). 1 High emitter to base voltage VEBO. 3 Low noise voltage NV. Mini type package, allowing downsizing of the equipment and 2 a
2sd1060.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SD1060 NPN SILICON TRANSISTOR NPN PLANAR SILICON TRANSISTOR FEATURES * Low collector-to-emitter saturation voltage VCE(SAT)=0.4V max/IC=3A, IB=0.3A ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SD1060L-x-AB3-R 2SD1060G-x-AB3-R SOT-89 B C E Tape Reel 2SD1060L-x-T60-K 2SD1060G-x-T6
2sd1073.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd1049.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd1071.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sd1005.pdf
2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 2 3 B C A E E C CLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B D Range 90 180 1
2sd1005.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1005 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent DC Current Gain Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO C
2sd1060.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1060 DESCRIPTION With TO-220 package Low collector-emitter saturation voltage Complement to type 2SB824 APPLICATIONS Suitable for relay drivers,high-speed Inverters,converters,and other general large-current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 m
2sd1026.pdf
Product Specification www.jmnic.com 2SD1026 Silicon NPN Transistors Features B C E With TO-247 package Darlington transistor Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 100 V VCEO Collector to emitter voltage 100 V VEBO Emitter to base voltage 7 V IB Base current 1 A IC Collector current 15 A PC Collector power di
2sd1023.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SD1023 DESCRIPTION DARLINGTON High DC current gain With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage O
2sd1025.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SD1025 DESCRIPTION DARLINGTON With TO-220 package PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 200 V VCEO
2sd1049.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1049 DESCRIPTION With TO-3PN package High current, High speed switching High reliability APPLICATIONS Switching regulators Motor controls High frequency inverters General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emi
2sd1062.pdf
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Ordering number ENN6987 2SB817C/2SD1047C PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor 2SB817C/2SD1047C 140V / 12A, AF 80W Output Applications Features Package Dimensions Large current capacitance. unit mm Wide ASO and high durability against breakdown. 2022A Adoption of MBIT process. [2SB817C/2SD1047C] 15.6 3.2 4.8 14.0 2.0
2sd1024.pdf
SHINDENGEN Darlington Transistor OUTLINE DIMENSIONS 2SD1024 Case TO-220 (T8L10) 8A NPN RATINGS Unit mm
2sd1005.pdf
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2sd1033.pdf
SMD Type Transistors NPN Transistors 2SD1033 TO-252 Unit mm +0.15 6.50-0.15 +0.1 Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 High voltageVCEO=150V. Complimentary to 2SB768 0.127 +0.1 0.80-0.1 max + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Vo
2sd1048.pdf
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2sd1007.pdf
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2sd1005.pdf
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2sd1006.pdf
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2sd1030.pdf
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2sd1000.pdf
SMD Type Transistors NPN Transistors 2SD1000 Features 1.70 0.1 Low collector saturation voltage. VCE(sat)
2sd1001.pdf
SMD Type Transistors NPN Transistors 2SD1001 Features 1.70 0.1 High collector saturation voltage. VCE(sat) > 80V Complimentary to 2SB800 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collect
2sd1000l 2sd1000k.pdf
2SD1000 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 0.8 A Power Dissipation Ptot 625
2sd1005bw 2sd1005bv 2sd1005bu.pdf
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2sd1007.pdf
2SD1007 NPN Silicon Epitaxial Transistor FEATURES High collector to emitter voltage VCEO 120V. SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Rating Unit Collector-base voltage V 120 V CBO Co
2sd1047d 2sd1047e.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 APPLICATIONS Recommend for 60W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
2sd1060q 2sd1060r 2sd1060s.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SD1060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB824 APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general large-current switching application
2sd1060.pdf
isc Silicon NPN Power Transistor 2SD1060 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 3.0A CE(sat) C Complement to Type 2SB824 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters,
2sd1063.pdf
isc Silicon NPN Power Transistors 2SD1063 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 4A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB827 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for universal high current switching as solenoid driving, high speed inverter and converter appl
2sd1044.pdf
isc Silicon NPN Darlington Power Transistor 2SD1044 DESCRIPTION High DC Current Gain h = 700(Min.)@ I = 1A, V = 4V FE C CE High Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR) CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MA
2sd1026.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1026 DESCRIPTION High DC Current Gain hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC
2sd1069.pdf
isc Silicon NPN Power Transistor 2SD1069 DESCRIPTION High Collector Current Capability High Collector Power Dissipation Capability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS TV horizontal deflection output applications. High voltage switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
2sd1023.pdf
isc Silicon NPN Darlington Power Transistor 2SD1023 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 3A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
2sd1047e.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1047E DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817E Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency a
2sd1095.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1095 DESCRIPTION High Voltage Capability Excellent Safe Operating Area Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls . DC-DC converters . Absolute maximum ratings(Ta=25 ) SYM
2sd1025.pdf
isc Silicon NPN Darlington Power Transistor 2SD1025 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
2sd1022.pdf
isc Silicon NPN Darlington Power Transistor 2SD1022 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 3A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
2sd1037.pdf
isc Silicon NPN Power Transistor 2SD1037 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volt
2sd1061.pdf
isc Silicon NPN Power Transistor 2SD1061 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 0.4V(Max) @I = 4.0A CE(sat) C Complement to Type 2SB825 Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general high curre
2sd1073.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1073 DESCRIPTION With TO-220 package High DC current gain DARLINGTON Low saturation voltage APPLICATIONS Audio power amplifiers Relay and solenoid drivers Motor controls General purpose power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting ba
2sd1049.pdf
isc Silicon NPN Power Transistor 2SD1049 DESCRIPTION High Current Capability Fast Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Motor controls High frequency inverters General purpose power amplifiers Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VALUE UNIT
2sd1016.pdf
isc Product Specification isc Silicon NPN Power Transistor 2SD1016 DESCRIPTION High Collector-Base Voltage- V = 1500V(Min) CBO High Current Capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB
2sd1031.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1031 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max)@ I = 4A CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier app
2sd1024.pdf
isc Silicon NPN Darlington Power Transistor 2SD1024 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 1500(Min) @I = 5A FE C Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpoe amplifier applications. ABSOLUTE MAXIMUM RATINGS(T
2sd1040.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1040 DESCRIPTION High Current Capability Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators in industrial and commercial application
2sd103.pdf
isc Silicon NPN Power Transistors 2SD103 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO High Power Dissipation- P = 25W(Max)@T =25 C C Complement to Type 2SB503 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier, power switching, DC-DC converter and regulator appl
2sd1032.pdf
isc Silicon NPN Power Transistor 2SD1032 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Large Collector Power Dissipation Complement to Type 2SB812 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
2sd1072.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1072 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators DC-DC converter Solid state relay General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(T
2sd1046.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1046 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB816 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For LF power amplifier, 50W output
2sd1065.pdf
isc Silicon NPN Power Transistors 2SD1065 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 8A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB829 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching a
2sd1047-247.pdf
isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage ap
2sd1027.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1027 DESCRIPTION High DC Current Gain hFE= 1500(Min.)@ IC= 10A, VCE= 3V High Collector-Emitter Sustaining Voltage- VCEO(SUS) = 200V(Min) APPLICATIONS Designed for general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VC
2sd1062.pdf
isc Silicon NPN Power Transistors 2SD1062 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I =6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB826 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers, high-speed inverters, converters, and other general high-current switching app
2sd1071.pdf
isc Silicon NPN Darlington Power Transistor 2SD1071 DESCRIPTION Low Collector Saturation Voltage High DC Current Gain High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio power amplifiers Relay & solenoid drivers Motor controls General purpose power amplifiers Including zener diode ABSOLUTE MAXIMUM
2sd1038.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1038 DESCRIPTION High Current Capability Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching and linear applications in military and industrial equipment. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
2sd1047.pdf
isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Current Capability Wide Area of Safe Operation Complement to Type 2SB817 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Recommend for 60W audio frequency amplifier output stage a
2sd1064.pdf
isc Silicon NPN Power Transistors 2SD1064 DESCRIPTION Low Collector Saturation Voltage V = 0.4V(Max)@ I = 6A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for relay drivers , high-speed inverters, converters,and other general high-current switching a
2sd1070.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1070 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
Otros transistores... 2SD1082, 2SD1083, 2SD1083L, 2SD1083S, 2SD1084, 2SD1085, 2SD1085K, 2SD1087, BC549, 2SD1089, 2SD1090, 2SD1091, 2SD1092, 2SD1093, 2SD1094, 2SD1095, 2SD1096
Parámetros del transistor bipolar y su interrelación.
History: 2SC4684
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L
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