2SD1106 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1106  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 400 W

Tensión colector-base (Vcb): 450 V

Corriente del colector DC máxima (Ic): 50 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 300

Encapsulados: SPECIAL

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2SD1106 datasheet

 8.1. Size:24K  hitachi
 2sd1101.pdf pdf_icon

2SD1106

2SD1101 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SB831 Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collector peak

 8.2. Size:326K  kexin
 2sd1101.pdf pdf_icon

2SD1106

SMD Type Transistors NPN Transistors 2SD1101 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.7A 1 2 Collector Emitter Voltage VCEO=20V +0.1 0.95-0.1 0.1+0.05 -0.01 Complement to 2SB831 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base

 8.3. Size:213K  inchange semiconductor
 2sd110.pdf pdf_icon

2SD1106

isc Silicon NPN Power Transistor 2SD110 DESCRIPTIONV High Power Dissipation- P = 100W@T = 25 C C High Current Capability- I = 10A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 8.4. Size:207K  inchange semiconductor
 2sd1105.pdf pdf_icon

2SD1106

isc Silicon NPN Power Transistor 2SD1105 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V (Min) (BR)CEO Wide Area of Safe Operation High Power and High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

MOSTRAR MÁS

Otros transistores... 2SD1101, 2SD1101A, 2SD1101B, 2SD1101C, 2SD1102, 2SD1103, 2SD1104, 2SD1105, BDT88, 2SD1107, 2SD1109, 2SD1109A, 2SD111, 2SD1110, 2SD1110A, 2SD1111, 2SD1112