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2SD1109A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1109A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 80

Empaquetado / Estuche: SPECIAL

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2SD1109A Datasheet (PDF)

4.1. 2sd1101.pdf Size:24K _hitachi

2SD1109A
2SD1109A

2SD1101 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SB831 Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SD1101 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5V Collector current IC 0.7 A Collector peak current

4.2. 2sd110.pdf Size:110K _inchange_semiconductor

2SD1109A
2SD1109A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD110 DESCRIPTION ·High Power Dissipation- : PC= 100W@TC= 25? ·High Current Capability- : IC = 10A APPLICATIONS ·Designed for power amplifier , power switching ,DC-DC converter and regulator applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta

 4.3. 2sd1105.pdf Size:103K _inchange_semiconductor

2SD1109A
2SD1109A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1105 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·High Power and High Reliability APPLICATIONS ·Designed for high power AF amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltag

4.4. 2sd1101.pdf Size:326K _kexin

2SD1109A

SMD Type Transistors NPN Transistors 2SD1101 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=0.7A 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 0.95-0.1 0.1+0.05 -0.01 ● Complement to 2SB831 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base

Otros transistores... 2N3187 , 2N3188 , 2N3189 , 2N319 , 2N3190 , 2N3191 , 2N3192 , 2N3193 , TIP122 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 .

 
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