All Transistors. 2SD1109A Datasheet

 

2SD1109A Datasheet and Replacement


   Type Designator: 2SD1109A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SPECIAL
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2SD1109A Datasheet (PDF)

 8.1. Size:24K  hitachi
 2sd1101.pdf pdf_icon

2SD1109A

2SD1101Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SB831OutlineMPAK311. Emitter2. Base23. Collector2SD1101Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 25 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 5VCollector current IC 0.7 ACollector peak

 8.2. Size:326K  kexin
 2sd1101.pdf pdf_icon

2SD1109A

SMD Type TransistorsNPN Transistors2SD1101SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=0.7A1 2 Collector Emitter Voltage VCEO=20V+0.10.95-0.1 0.1+0.05-0.01 Complement to 2SB831 +0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base

 8.3. Size:213K  inchange semiconductor
 2sd110.pdf pdf_icon

2SD1109A

isc Silicon NPN Power Transistor 2SD110DESCRIPTIONVHigh Power Dissipation-: P = 100W@T = 25C CHigh Current Capability-: I = 10ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power amplifier , power switching ,DC-DCconverter and regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.4. Size:207K  inchange semiconductor
 2sd1105.pdf pdf_icon

2SD1109A

isc Silicon NPN Power Transistor 2SD1105DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V (Min)(BR)CEOWide Area of Safe OperationHigh Power and High ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power AF amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

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History: RT5N234C

Keywords - 2SD1109A transistor datasheet

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