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2SD1119 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1119

Código: TQ_TR

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.5 W

Tensión colector-base (Vcb): 40 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 260

Empaquetado / Estuche: SP0

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2SD1119 Datasheet (PDF)

1.1. 2sd1119.pdf Size:38K _panasonic

2SD1119
2SD1119

Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini type package, allowing downsizing of the equipment and 0.4 0.08 automatic insertion through the

1.2. 2sd1119 e.pdf Size:42K _panasonic

2SD1119
2SD1119

Transistor 2SD1119 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the 45 low-voltage power supply. Mini type package, allowing downsizing of the equipment and 0.4 0.08 automatic insertion through the

 1.3. 2sd1119.pdf Size:510K _htsemi

2SD1119
2SD1119

2SD1119 SOT-89 TRANSISTOR (NPN) 1. BASE FEATURES Low collector-emitter saturation voltage VCE(sat) 2. COLLECTOR 1 Satisfactory operation performances at high efficiency with the low 2 voltage power supply. 3. EMITTER 3 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V

1.4. 2sd1119.pdf Size:187K _lge

2SD1119
2SD1119

2SD1119 SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 2 B 4.4 1.6 1.8 3. EMITTER 1.4 3 1.4 2.6 4.25 Features 2.4 3.75 0.8 Low collector-emitter saturation voltage VCE(sat) MIN 0.53 Satisfactory operation performances at high efficiency with the low 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 voltage power supply. 3.0 Dimensions in inches and

 1.5. 2sd1119.pdf Size:299K _kexin

2SD1119

SMD Type Transistors NPN Transistors 2SD1119 1.70 0.1 ■ Features ● Collector Current Capability IC=3 A ● Collector Emitter Voltage VCEO=25 V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 7 Collector

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 431 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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