2SD1124 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SD1124
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 80 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 1000
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar 2SD1124
2SD1124 Datasheet (PDF)
2sd1124.pdf
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1124 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 80V(Min) CEO(SUS) High DC Current Gain h = 1000(Min) @I = 1A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose amplifier and low-speed swi
2sd1126.pdf
2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.5 k 130 2 3 (Typ) (Typ) 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC
2sd1128.pdf
2SD1128 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-220 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25 PC 30 W Junction Temperature Tj 150
Otros transistores... 2SD1117A , 2SD1118 , 2SD1119 , 2SD1120 , 2SD1120O , 2SD1121 , 2SD1122 , 2SD1123 , BC557 , 2SD1125 , 2SD1126 , 2SD1126K , 2SD1127 , 2SD1127K , 2SD1128 , 2SD1129 , 2SD113 .
History: 2SC2971 | DBC846BPDW1T1G | EQF0009 | DDTA114TKA | NB123EI | MMUN2131LT2 | 2SD1015
History: 2SC2971 | DBC846BPDW1T1G | EQF0009 | DDTA114TKA | NB123EI | MMUN2131LT2 | 2SD1015
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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