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2SD1128 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SD1128

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 150 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 11 MHz

Capacitancia de salida (Cc): 54 pF

Ganancia de corriente contínua (hfe): 5000

Empaquetado / Estuche: TO220

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2SD1128 Datasheet (PDF)

1.1. 2sd1128.pdf Size:65K _wingshing

2SD1128

2SD1128 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-220 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 100 V Collector Current (DC) IC 5 A Collector Dissipation (Tc=25? PC 30 W ? ? ? Junction Temperature Tj 150 ? ? ? ? ? St

4.1. 2sd1126.pdf Size:33K _hitachi

2SD1128
2SD1128

2SD1126(K) Silicon NPN Triple Diffused Application Power switching Outline TO-220AB 2 1 1. Base ID 2. Collector (Flange) 1 3. Emitter 1.5 k? 130 ? 2 3 (Typ) (Typ) 3 2SD1126(K) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V Emitter to base voltage VEBO 7V Collector current IC 10 A C

4.2. 2sd1127.pdf Size:282K _hitachi

2SD1128
2SD1128

 4.3. 2sd1126.pdf Size:266K _inchange_semiconductor

2SD1128
2SD1128

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1126 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 5A ·Low Saturation Voltage APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Coll

4.4. 2sd1127.pdf Size:228K _inchange_semiconductor

2SD1128
2SD1128

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1127 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 120V(Min) ·High DC Current Gain : hFE= 1000(Min) @IC= 10A ·Low Saturation Voltage APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO C

Otros transistores... 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .

 
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